Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Bo-Yi Chou"'
Autor:
Bo-Yi Chou, 周伯羿
97
This work reports, a transparent Aluminum-doped zinc oxide (AZO) gate material deposited on AlGaAs/InGaAs δ-doped pseudomorphic high electron mobility transistors have been prepared by RF reactive magnetron sputtering system from an AZO targ
This work reports, a transparent Aluminum-doped zinc oxide (AZO) gate material deposited on AlGaAs/InGaAs δ-doped pseudomorphic high electron mobility transistors have been prepared by RF reactive magnetron sputtering system from an AZO targ
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/53994451847737683806
Autor:
Bo-Yi Chou, 周柏頤
90
Scotch Yoke is a mechanism that converts rotary motion into linear motion. Driven by a constant-speed motor, it can produce exact sinusoidal movement. Although Scotch Yoke have existed for a long time, several problems remain to be explored.
Scotch Yoke is a mechanism that converts rotary motion into linear motion. Driven by a constant-speed motor, it can produce exact sinusoidal movement. Although Scotch Yoke have existed for a long time, several problems remain to be explored.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/54509455879447185705
Publikováno v:
IEEE Sensors Journal. 15:3359-3366
This paper uses H2O2 oxidation technique to grow Al2O3 on AlGaN/GaN heterostructure. The H2O2-grown-Al2O3 is served as a sensing membrane and a surface passivation layer. The contact angle of the ion-sensitive field-effect transistor (ISFET) with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96bf7f160dd5b063999d436af4612216
https://doi.org/10.1109/jsen.2015.2390641
https://doi.org/10.1109/jsen.2015.2390641
Autor:
Wen-Ching Sun, Sung-Yen Wei, Ching-Sung Lee, Wei-Chou Hsu, Bo-Yi Chou, Han-Yin Liu, Sheng-Min Yu, Chang-Luen Wu, Cheng-Long Yang
Publikováno v:
IEEE Transactions on Electron Devices. 62:1460-1466
Comparative studies for TiO2-passivated Al0.25Ga0.75N/GaN heterostructure FETs (HFETs) and TiO2-dielectric MOS-HFETs using nonvacuum ultrasonic spray pyrolysis deposition technique are made. Optimum device performances are obtained by tuning the laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f96139d30db2e74dff3eac69275f46e
https://doi.org/10.1109/ted.2015.2414947
https://doi.org/10.1109/ted.2015.2414947
Publikováno v:
IEEE Photonics Technology Letters. 27:101-104
This letter demonstrates and investigates AlGaN/GaN metal–insulator–semiconductor ultraviolet photodetector (MIS-UV-PD) with a cost-effective wet oxidation technique. The H2O2 oxidation technique is adopted to grow an insulator layer. The materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd4e2a7435a916045e0d329e3e8b86c2
https://doi.org/10.1109/lpt.2014.2362911
https://doi.org/10.1109/lpt.2014.2362911
Publikováno v:
Journal of Materials Science and Chemical Engineering. :66-71
CrAlSiN with thickness up to 16 μm was deposited on tungsten carbide via multi-deposition process by cathode arc deposition technique. Scratch and water-sand jet impingement erosion tests were carried out to evaluate the adhesion by determining the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c1ed4f3eaef1e9e38e10d612a6a334e
https://doi.org/10.4236/msce.2015.31010
https://doi.org/10.4236/msce.2015.31010
Autor:
Yi Hsuan Wang, Sheng Min Yu, Wei-Chou Hsu, Bo-Yi Chou, Sung Yen Wei, Han-Yin Liu, Meng-Hsueh Chiang, Wen Ching Sun
Publikováno v:
IEEE Transactions on Electron Devices. 61:4062-4069
This paper proposed Al 2 O 3 deposition by ultrasonic spray pyrolysis (USP) method as an insulator layer for Al 2 O 3 /AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetector (MIS-UV-PD) applications. The composition of USP-grown Al 2 O 3 w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cb0b012156cb65844f1f51997d84e60
https://doi.org/10.1109/ted.2014.2360524
https://doi.org/10.1109/ted.2014.2360524
Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation
Publikováno v:
Superlattices and Microstructures. 72:194-203
Composite HfO2/Al2O3-dielectric In0.2Ga0.8As/Al0.24Ga0.76As metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) by using RF sputtering/ozone water oxidization, respectively, are investigated. In comparison with a conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe4f2191f7ce5bde8971286cfed07288
https://doi.org/10.1016/j.spmi.2014.04.016
https://doi.org/10.1016/j.spmi.2014.04.016
Publikováno v:
IEEE Transactions on Electron Devices. 61:2760-2766
This paper investigates the temperature-dependent performances of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT). The gate dielectric layer and surface passivation layer are formed by the H 2 O 2 oxidation technique.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27f8d745b5d5ae1ed6ffc249a4cb7e8d
https://doi.org/10.1109/ted.2014.2327123
https://doi.org/10.1109/ted.2014.2327123
Publikováno v:
IEEE Photonics Technology Letters. 26:138-141
This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H2O2) oxidation technique is adopted to complete the passivation. The results of chemical analysis suggest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c03ebcffc3a634a985c3561edd18dbd6
https://doi.org/10.1109/lpt.2013.2290130
https://doi.org/10.1109/lpt.2013.2290130