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pro vyhledávání: '"Bo-Sen Huang"'
Autor:
Bo-Sen Huang, 黃柏森
96
Under 45 nm generations, it is necessary to use high-κ gate dielectrics. HfSiON is one of the most promising candidates because it has high thermal stability and inversion layer mobility comparing with other high-κ materials. In this work,
Under 45 nm generations, it is necessary to use high-κ gate dielectrics. HfSiON is one of the most promising candidates because it has high thermal stability and inversion layer mobility comparing with other high-κ materials. In this work,
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/jjn722
Autor:
Bo-sen Huang, 黃柏森
95
Most of crystalline Ta2O5 thin films is either deposited from a amorphous film at room temperature and then annealed at 600-900℃ or deposited at sputtering temperatures greater than 500-600℃. In literature, we found that the lowest deposi
Most of crystalline Ta2O5 thin films is either deposited from a amorphous film at room temperature and then annealed at 600-900℃ or deposited at sputtering temperatures greater than 500-600℃. In literature, we found that the lowest deposi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/32204407578147367347
Publikováno v:
Journal of Research in Education Sciences, Vol 56, Iss 2, Pp 175-206 (2011)
本文旨在分析比較2 篇能量塔文本的語言特性及其差異。選取七年級X、Y版生態系單元與能量塔概念有關的內容為標的文本,以逐步文本分析系統分析比較2 篇文本的基本語言、漢語及科學語
Externí odkaz:
https://doaj.org/article/7f09c21195ab47739f687b8fa0e5e405
Publikováno v:
Journal of Alloys and Compounds. 475:488-493
Crystalline tantalum pentoxide thin films have higher dielectric constants, and optical indices than in amorphous form. High temperature processes above 850 °C are generally required in previous researches. In this study, we investigate the effect o