Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Bo-Jheng Shih"'
Autor:
Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Huang-Chung Cheng, Kuan-Neng Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 262-268 (2023)
This paper proposed a fabrication of p-type Germanium (Ge) tri-gate field-effect transistors (Tri-gate FETs) via green nanosecond laser crystallization (GNSLC) and counter doping (CD). By using the GNSLC, the nano-crystalline-Ge (nc-Ge) with a grain
Externí odkaz:
https://doaj.org/article/ef4cc10c6b1946188bd1a720f82eb48b
Autor:
Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Po-Tsang Huang, Huang-Chung Cheng, Kuan-Neng Chen, Chenming Hu
Publikováno v:
IEEE Electron Device Letters. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a68fc54b0f8a1450d6dd5262348dba4c
https://doi.org/10.1109/led.2023.3275181
https://doi.org/10.1109/led.2023.3275181
Autor:
Hao-Tung Chung, Bo-Jheng Shih, Chih-Chao Yang, Nei-Chih Lin, Po-Tsang Huang, Yun-Ping Lan, Kuan-Fu Lai, Wan-Ting Hsu, Yu-Ming Pan, Zhong-Jie Hong, Han-Wen Hu, Huang-Chung Cheng, Chang-Hong Shen, Jia-Min Shieh, Fu-Kuo Hsueh, Bo-Yuan Chen, Da-Chiang Chang, Wen-Kuan Yeh, Kuan-Neng Chen, Chenming HU
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e753795da2e98accd117b4cb00b8e677
https://doi.org/10.1109/iedm19574.2021.9720512
https://doi.org/10.1109/iedm19574.2021.9720512
Autor:
Tzung-Han Tsai, Wen-Kuan Yeh, Chenming Hu, Yun-Ping Lan, Chang-Hong Shen, Chih-Chao Yang, Po-Tsang Huang, Kuan-Neng Chen, Bo-Jheng Shih, Yu-Wei Liu, Jia-Min Shieh, Da-Chiang Chang, Kuan-Fu Lai, Ping-Yi Hsieh
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
A single-crystal-island (SCI) technique is demonstrated using low thermal budget pulse laser process to fabricate single-crystal islands for monolithic 3D back-end-of-line (BEOL) FinFET circuits. The single-crystallinity are verified with SECCO etch,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7350bcdb9dec58a0444f8bf0e2539741
https://doi.org/10.1109/iedm13553.2020.9372129
https://doi.org/10.1109/iedm13553.2020.9372129