Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Bo-Chin Wang"'
Autor:
Bo-Chin Wang, 王柏欽
95
FVP of 2-methoxy-N-(arenylidene)anilines gave benzoxazoles；both FVP and photolysis of 2-thiomethoxy-N-(arenylidene)anilines gave benzothiazoles.
FVP of 2-methoxy-N-(arenylidene)anilines gave benzoxazoles；both FVP and photolysis of 2-thiomethoxy-N-(arenylidene)anilines gave benzothiazoles.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/ef8dnm
Autor:
Shoou-Jinn Chang, Bo Chin Wang, Chung Yi Wu, San Lein Wu, Po Chin Huang, Tsung Hsien Kao, Yean-Kuen Fang
Publikováno v:
Solid-State Electronics. 115:7-11
In this study, the properties of dielectric traps by the impact of Fluorine (F) implantation on 1/ f noise and the random telegraph noise (RTN) of high-k/metal gate (HK/MG) p-type metal–oxide–semiconductor field-effect transistors (pMOSFETs) were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bab7d4f41d7c5f3de8c51383ffc5257
https://doi.org/10.1016/j.sse.2015.09.013
https://doi.org/10.1016/j.sse.2015.09.013
Autor:
Chung-Wei Liu, Shoou-Jinn Chang, San-Lein Wu, Chih-Hung Hsiao, Sheng-Joue Young, Bo-Chin Wang, Kuang Yao Lo, Kai-Shiang Tsai, Tsung-Hsien Kao
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:89-95
The growth of vertically aligned cobalt-doped ZnO (Co–ZnO) nanorods on a glass substrate using a low-temperature hydrothermal method is reported. A Co–ZnO nanorod metal–semiconductor–metal ultraviolet photodetector (PD) was also fabricated. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3163084a48f853f9135586c9f9e16073
https://doi.org/10.1109/jstqe.2014.2312935
https://doi.org/10.1109/jstqe.2014.2312935
Autor:
Bo-Chin Wang, Ming-Yueh Chuang, Chih-Chiang Yang, Yu Chun Huang, Yan-Kuin Su, Chih-Hung Hsiao, San-Lein Wu, Tsung-Hsien Kao, Sheng-Joue Young
Publikováno v:
IEEE Photonics Technology Letters. 26:1317-1320
Vertically aligned Ga-doped ZnO (GZO) nanosheets were grown on a glass substrate using a low-temperature (90 °C) hydrothermal method. The average length and diameter of the nanosheets were \(\sim 720\) and 26 nm, respectively. The GZO nanosheets exh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d206df90e39e7d2b729170392e0cfa4
https://doi.org/10.1109/lpt.2014.2322512
https://doi.org/10.1109/lpt.2014.2322512
Autor:
Kai-Shiang Tsai, Yi-Hsing Liu, San-Lein Wu, Chih-Hung Hsiao, Shoou-Jinn Chang, Bo-Chin Wang, Tsung-Hsien Kao, Sheng-Joue Young
Publikováno v:
IEEE Transactions on Nanotechnology. 13:238-244
This study presents the fabrication of ZnO nanosheets on a glass substrate using a room-temperature (approximately 25 °C) solution method. The average length and diameter of the ZnO nanosheets were 1.2 μm and approximately 5 nm, respectively. The u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d52cc1a024893a0d2c4b8b4cf76675
https://doi.org/10.1109/tnano.2014.2298335
https://doi.org/10.1109/tnano.2014.2298335
Autor:
Bi-Gui Duan, Kai-Shiang Tsai, Bo-Chin Wang, Tsung-Hsien Kao, Chih-Hung Hsiao, Shoou-Jinn Chang, San-Lein Wu, Sheng-Joue Young
Publikováno v:
IEEE Photonics Technology Letters. 25:2043-2046
We report the growth of vertically aligned indium-doped ZnO (IZO) nanorods on a glass substrate using a low-temperature hydrothermal method. An IZO nanorod metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) was also fabricated. It wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d61b3ddb1856604e749d23b4298be8
https://doi.org/10.1109/lpt.2013.2280719
https://doi.org/10.1109/lpt.2013.2280719
Autor:
Chia Wei Hsu, Chien Ming Lai, Yi-Wen Chen, Bo Chin Wang, Po Chin Huang, Tsung Hsien Kao, Yean-Kuen Fang, San Lein Wu, Osbert Cheng, Shoou-Jinn Chang, Chung Yi Wu
Publikováno v:
IEEE Electron Device Letters. 35:954-956
The impact of aluminum ion implantation (Al I/I) on the 1/f noise and random telegraph noise (RTN) characteristics of high-k/metal gate (HK/MG) pMOSFETs is investigated. The Al I/I technology was implemented to tune the effective work function (EWF)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93cb9bb6cbdb3e7210763d3b2e997df
https://doi.org/10.1109/led.2014.2336866
https://doi.org/10.1109/led.2014.2336866
Publikováno v:
Microelectronics Reliability. 50:610-613
Process-induced strain dependence of impact ionization efficiency (IIE) in nMOSFETs with a tensile contact etch stop layer (CESL) is presented for the first time. From the universal relationship between the IIE and the electric field in the pinch-off
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::834f82b5ea713ca2fc28b95aae326266
https://doi.org/10.1016/j.microrel.2010.01.028
https://doi.org/10.1016/j.microrel.2010.01.028
Autor:
Chih-Wei Yang, Chien Ming Lai, San Lein Wu, Che Hua Hsu, Bo Chin Wang, Shih Chang Tsai, Po Chin Huang, Jone F. Chen, Chia-Wei Hsu, Osbert Cheng, Shoou-Jinn Chang
Publikováno v:
IEEE Electron Device Letters. 34:834-836
In this letter, the effect of adding ZrO2 to different positions in an HfO2-based high-k (HK) gate-stack is investigated by a low-frequency (1/ f ) noise measurement. The tested nMOSFETs are fabricated using 28-nm gate-last HK/metal-gate technology w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2c77105cb92d43afe01d9034a102f52
https://doi.org/10.1109/led.2013.2261858
https://doi.org/10.1109/led.2013.2261858
Autor:
Che Hua Hsu, Bo Chin Wang, Shoou-Jinn Chang, Cheng Guo Chen, Po Chin Huang, Jone F. Chen, Osbert Cheng, Shih Chang Tsai, San Lein Wu, Yu Ying Lu, Chih-Wei Yang
Publikováno v:
IEEE Electron Device Letters. 34:151-153
Low-frequency (1/f) noise characteristics of 28-nm nMOSFETs with ZrO2/SiO2 and HfO2/SiO2 dielectric gate stacks have been investigated. The observed lower 1/f noise level in ZrO2 devices, as compared with that in HfO2 devices, is attributed to the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d54a15e2e41d8e94fbf17d9a2703a35
https://doi.org/10.1109/led.2012.2226698
https://doi.org/10.1109/led.2012.2226698