Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Bo-Chao ZHAO"'
Autor:
Xiu-Lan He, Shu-Yan Qi, Qu Tan, Tian-Nuo Shi, Yuan Wang, Huan-Yan Xu, Hang Zhao, Bo-Chao Zhao
Publikováno v:
Frontiers of Materials Science. 12:34-44
The kinetics and Fenton-like mechanism are two challenging tasks for heterogeneous Fenton-like catalytic oxidation of organic pollutants. In this study, three kinetic models were used for the kinetic studies of Fe3O4/MWCNTs-H2O2 Fenton-like reaction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd30be8c8795b63d9c7b91761e534f8e
https://doi.org/10.1007/s11706-018-0412-5
https://doi.org/10.1007/s11706-018-0412-5
Autor:
Shu-Yan Qi, Qu Tan, Xiu-Lan He, Huan-Yan Xu, Tian-Nuo Shi, Hang Zhao, Bo-Chao Zhao, Yuan Wang
Publikováno v:
Frontiers of Materials Science. 12:21-33
Multi-walled carbon nanotubes (MWCNTs) can act not only as a support for Fe3O4 nanoparticles (NPs) but also as a coworker with synergistic effect, accordingly improving the heterogeneous Fenton-like efficiency of Fe3O4 NPs. In this study, Fe3O4 NPs w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::361c1401748546e3f76bbff278a510c8
https://doi.org/10.1007/s11706-018-0408-1
https://doi.org/10.1007/s11706-018-0408-1
Publikováno v:
Solid-State Electronics. 129:108-113
A new method to extract parasitic capacitances and inductances for high electron-mobility transistors (HEMTs) is proposed in this paper. Compared with the conventional extraction method, the depletion layer is modeled as a physically significant capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97dedfef2653242b1e137f6ad0991c1e
https://doi.org/10.1016/j.sse.2016.12.003
https://doi.org/10.1016/j.sse.2016.12.003
Autor:
Yang Lu, Bo-Chao Zhao, Xiaohua Ma, Peijun Ma, Hao Zhang, Xue-Feng Zheng, Yue Hao, Zheng Jiaxin
Publikováno v:
Solid-State Electronics. 123:96-100
In this paper, a high efficiency C-band gallium nitride (GaN) internally-matched power amplifier (PA) is presented. This amplifier consists of 2-chips of self-developed GaN high-electron mobility transistors (HEMTs) with 16 mm total gate width on SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8687e8b630312af22f68528002de2f9c
https://doi.org/10.1016/j.sse.2016.06.001
https://doi.org/10.1016/j.sse.2016.06.001
Publikováno v:
Electronics Letters. 50:1207-1209
A high-efficiency C-band internally matched power amplifier, developed with 12 mm AlGaN/GaN high-electron mobility transistors is described. The second-harmonic frequency (2f 0) tuning network is applied to confine the impedance at 2f 0 in safe effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8796344d3f45dbaf243aeac8500cab1e
https://doi.org/10.1049/el.2014.2092
https://doi.org/10.1049/el.2014.2092
Publikováno v:
Advances in Computer Science Research.
The structure, properties and functions of molybdenum diselenide are described briefly.The present situation of the synthesis of molybdenum diselenide is surveyed on the basis of the introduction of chemical, restacking and physical methods. The appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae4cfda63fe75926f65ac9198c73b62
https://doi.org/10.2991/iccset-14.2015.29
https://doi.org/10.2991/iccset-14.2015.29
Autor:
Hengshuang Zhang, Zheng Jiaxin, Xiaohua Ma, Lixiang Chen, Yang Lu, Meng Zhang, Yue Hao, Qing Zhu, Bo-Chao Zhao
Publikováno v:
Chinese Physics B. 26:088401
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab9174b3ce2efac7d3bd34c9905d3eba
https://doi.org/10.1088/1674-1056/26/8/088401
https://doi.org/10.1088/1674-1056/26/8/088401
Autor:
Huan-Yan XU, Yuan WANG, Tian-Nuo SHI, Hang ZHAO, Qu TAN, Bo-Chao ZHAO, Xiu-Lan HE, Shu-Yan QI
Publikováno v:
Frontiers of Materials Science; Mar2018, Vol. 12 Issue 1, p34-44, 11p
Autor:
Huan-Yan XU, Yuan WANG, Tian-Nuo SHI, Hang ZHAO, Qu TAN, Bo-Chao ZHAO, Xiu-Lan HE, Shu-Yan QI
Publikováno v:
Frontiers of Materials Science; Mar2018, Vol. 12 Issue 1, p21-33, 13p
Autor:
Bo-Chao Zhao, Zuochen Shi, Yue Hao, Peijun Ma, Hengshuang Zhang, Xiaohua Ma, Yang Lu, Zheng Jiaxin
Publikováno v:
IEICE Electronics Express. 13:20160509-20160509
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::662cd8daf58a58ccd2176c440d3f194d
https://doi.org/10.1587/elex.13.20160509
https://doi.org/10.1587/elex.13.20160509