Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Bo-Bae Song"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 691-695 (2018)
This paper proposes a new structure of silicon controlled rectifier (SCR)-based ESD protection circuit using a penta-well for ESD protection in 5 V applications. The proposed circuit exhibits higher holding voltage and current-driving capability than
Externí odkaz:
https://doaj.org/article/79cc431377ad403fa58e73d7a037a1c0
Publikováno v:
ETRI Journal, Vol 39, Iss 5, Pp 746-755 (2017)
In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic‐diode‐triggered silicon controlled rectifier. The breakdown voltage and trigger voltage (Vt) of the proposed ESD pro
Externí odkaz:
https://doaj.org/article/a522b9129fe54af5ba6213dff52cac05
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:716-722
Dual-direction electrostatic discharge (ESD) protection devices can discharge both positive and negative ESD surges, owing to their excellent area efficiency. This study proposes a novel dual-direction MOSFET ESD protection device with a high holding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e981c0bcca11d1364c46df3ec4fbb32
https://doi.org/10.1109/tdmr.2020.3022897
https://doi.org/10.1109/tdmr.2020.3022897
Publikováno v:
IEEE Transactions on Electron Devices. 67:5020-5027
This article proposes a dual-directional silicon-controlled rectifier (SCR) with a novel structure and high holding voltage to improve the electrostatic discharge (ESD) design area efficiency in high-voltage environments. In terms of structure, by de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9136b132f38b906914a0e1cbb641dda9
https://doi.org/10.1109/ted.2020.3023064
https://doi.org/10.1109/ted.2020.3023064
Publikováno v:
IEEE Transactions on Electron Devices. 68:4805-4805
In Section I of the above article [1] , the sentence beginning in the 18th line of the second column contains typos that misrepresent the range of voltages. The correct sentence is the following: “However, the strong snapback characteristics of a t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ee5d27c64dd02c3c7caa3b8837d1398
https://doi.org/10.1109/ted.2021.3073182
https://doi.org/10.1109/ted.2021.3073182
Publikováno v:
ETRI Journal, Vol 39, Iss 5, Pp 746-755 (2017)
ETRI JOURNAL(39): 5
ETRI JOURNAL(39): 5
In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic-diode-triggered silicon controlled rectifier. The breakdown voltage and trigger voltage (V-t) of the proposed ESD protec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31e30af074b78a961f34d693485beb92
https://doaj.org/article/a522b9129fe54af5ba6213dff52cac05
https://doaj.org/article/a522b9129fe54af5ba6213dff52cac05
Autor:
Bo-Bae Song, Yong-Seo Koo
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 15:292-300
This paper proposes a high-efficiency, dualmode PWM / linear buck converter with a wide-input range. The proposed converter was designed with a mode selector that can change the operation between PWM / linear mode by sensing a load current. The propo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3002c873797c205264efbd3743b3bb5d
https://doi.org/10.5573/jsts.2015.15.2.292
https://doi.org/10.5573/jsts.2015.15.2.292
In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2345e7a5998a3a94fd66ca24fb7d549f
Publikováno v:
Journal of IKEEE. 17:378-384
We have investigated the electrical characteristics of SCR(Silicon Controlled Rectifier)-based ESD power clamp circuit with high holding voltage and dual-directional ESD protection cells for a whole-chip ESD protection. The measurement results indica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65068b8f84cd71e8971bbab200ccae73
https://doi.org/10.7471/ikeee.2013.17.3.378
https://doi.org/10.7471/ikeee.2013.17.3.378
Publikováno v:
Journal of IKEEE. 17:214-220
Small area LDO (Low drop-out) regulator with pass transistor using body-driven technique is presented in this paper. The body-driven technique can decrease threshold voltage (Vth) and increase the current ID flowing from drain to source in current. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c555566c14b154c5548eb0dc57c9b7a5
https://doi.org/10.7471/ikeee.2013.17.2.214
https://doi.org/10.7471/ikeee.2013.17.2.214