Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Bo Wen Lee"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 505:58-63
Understanding the behavior of dopant activation at low temperatures is necessary for three-dimensional integration of transistors. In this work, the impact of hydrogen coimplantation on boron activation was investigated at implantation doses below th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb77634bde5f8b7bf2a30a869a0dd6f2
https://doi.org/10.1016/j.nimb.2021.08.009
https://doi.org/10.1016/j.nimb.2021.08.009
Publikováno v:
Japanese Journal of Applied Physics. 59:096501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09744820462dfd369af94f9f6ad318af
https://doi.org/10.35848/1347-4065/aba9a6
https://doi.org/10.35848/1347-4065/aba9a6