Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Bo Wen Jia"'
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-10 (2024)
Waveguide-integrated photodetectors (PDs) play a crucial role in mid-infrared (MIR) silicon photonics, serving vital functions in sensing and communication applications. III-V semiconductors are widely used in MIR PDs, and many state-of-the-art III-V
Externí odkaz:
https://doaj.org/article/32109aad114b46548f3a3a65e29c9ffa
Publikováno v:
Metals, Vol 13, Iss 10, p 1676 (2023)
Two new β-type titanium (β-Ti) alloys of Ti-10.5Cr-5.4Mn-2.4Zr-0.9Al and Ti-15.6Cr-12Mn-3.3Zr were designed with the same bond order value 2.79 and different d-orbital energy level values of 2.28 and 2.16, respectively. The effect of intermetallic
Externí odkaz:
https://doaj.org/article/c337f73e591240d9813850f8f7a6140d
Publikováno v:
Applied Surface Science. 427:876-883
This work presents the effects of in situ thermal annealing under antimony overpressure on the structural, electrical, and optical properties of III-Sb (GaSb and InSb) grown on (100) GaAs using an interfacial misfit array to accommodate the lattice m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61435a029d4e155f7a4654ea278e6957
https://doi.org/10.1016/j.apsusc.2017.09.081
https://doi.org/10.1016/j.apsusc.2017.09.081
Publikováno v:
Optoelectronic Devices and Integration VIII.
Epitaxial growth of a high-quality InSb layer on a mismatched substrate which provides a path to monolithically integrate InSb-based photonic devices and Si/GaAs-based electronic devices on a single wafer. This work is an attempt to investigate the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2911b70e30cfddbcba7a36fd2025723
https://doi.org/10.1117/12.2536915
https://doi.org/10.1117/12.2536915
Publikováno v:
Journal of Applied Physics; 2016, Vol. 120 Issue 3, p035301-1-035301-8, 8p, 2 Diagrams, 1 Chart, 2 Graphs
Publikováno v:
Journal of Applied Physics; 6/14/2015, Vol. 117 Issue 22, p223106-1-223106-6, 6p, 3 Charts, 6 Graphs
A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial mis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d5897497f7e659a276a2091a5f375ee
https://hdl.handle.net/10356/104687
https://hdl.handle.net/10356/104687
The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e17f6deabf571cc5ec7024cedf550153
http://hdl.handle.net/10220/50067
http://hdl.handle.net/10220/50067
Monolithic integration of InSb on (1 0 0) Si is a practical approach to realizing on-chip mid-infrared photonic devices. An InSb layer was grown on a (1 0 0) Si substrate using an AlSb/GaSb buffer containing InSb quantum dots (QDs). The growth proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58d7d1d618c0bd90a3254c7572cf3738
https://hdl.handle.net/10356/107586
https://hdl.handle.net/10356/107586
Publikováno v:
Materials Letters. 158:258-261
We report a fully relaxed low threading dislocation density InSb layer grown on a GaAs substrate using self-assembled periodic interfacial misfit dislocations. The InSb layer was grown at 310°C by molecular beam epitaxy. The AFM measurement exhibite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6de4247f6c6328973741202236be3695
https://doi.org/10.1016/j.matlet.2015.05.123
https://doi.org/10.1016/j.matlet.2015.05.123