Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Bo H. Vanderberg"'
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
As a member of the Purion ion implanter family, Purion H is Axcelis' next generation high current implanter. Purion H provides customers with an unprecedented level of process flexibility and yield-enabling technology, and features the platform's fou
Publikováno v:
AIP Conference Proceedings.
Modern ion implanters typically use dc arc discharge Plasma Electron Floods (PEFs) to neutralize wafer charge. The arc discharge requires using at least some refractory metal hardware, e.g. a thermionically emitting filament, which can be undesirable
Publikováno v:
AIP Conference Proceedings.
The emergence of higher‐dose and lower‐energy halo and source‐drain extension implants for 90 and 65‐nm nodes drove the design of Axcelis’ Optima MD ion implanter. The Optima MD extends the proven process performance of traditional medium
Publikováno v:
AIP Conference Proceedings.
Implant angle control is increasingly important with each new device node. Some devices have demonstrated a sensitivity of threshold voltage of about 100 mV/deg for implant angle and require implant angles to be held within +/− 0.2° for process co
Autor:
Bo H. Vanderberg, Jan E. Eninger
Publikováno v:
Physics of Plasmas. 4:256-258
Measurements on the current-voltage-magnetic field characteristics of a space-charge-limited cylindrical cross-field diode below cutoff are presented. The measured current is found to be lower than predicted by simple cold-fluid theory. This reductio
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
The need for ultra-shallow junction formation in advanced devices makes the development of high throughput ion implantation solutions at very low (sub-keV) energies increasingly more important. The fundamental challenges confronting the implant tool
Conference
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Conference
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