Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Bo Chen Tsou"'
Publikováno v:
IEICE Transactions on Electronics. :520-523
A selectively ion-implanted collector (SIC) is implemented in a 0.8μm BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better f t and f max than the FIC (fully ion-implanted collector) BJT device because th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::508674d32e360ee8a9c1ed1e6495bbd8
https://doi.org/10.1093/ietele/e89-c.4.520
https://doi.org/10.1093/ietele/e89-c.4.520
Publikováno v:
IEICE Transactions on Electronics. :1127-1132
A method to monitor the GaInP/GaAs HBT device structure including emitter ledge thickness is demonstrated in this paper. The base thickness and base doping density are obtained through base transit time and base sheet resistance measurements while th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::054b525c23e6ad154b5d866dca869e20
https://doi.org/10.1093/ietele/e88-c.6.1127
https://doi.org/10.1093/ietele/e88-c.6.1127
Autor:
Da-Wei Sung, Shih-An Yu, Shey-Shi Lu, Tzung-Han Wu, M. H. Chiang, Chinchun Meng, Ching Hung Chen, S. K. Hsu, Ming-Chou Chiang, Sheng-Che Tseng, Guo-Wei Huang, Mingchi Lin, Jhih-Ci Jhong, Bo-Chen Tsou, YuWen Chang, Hsiao-Chin Chen
Publikováno v:
2005 Asia-Pacific Microwave Conference Proceedings.
Several high performance GaInP/GaAs heterojunction bipolar transistor (HBT) radio frequency integrated circuits (RFICs) implemented by our research group are reviewed in this paper. These demonstrated RFICs include source inductively degenerated casc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935e13dc9ce74bbc43055316d1dccad4
https://doi.org/10.1109/apmc.2005.1606393
https://doi.org/10.1109/apmc.2005.1606393
Autor:
Chinchun Meng, Tzung-Han Wu, Mingchi Lin, Ching Hung Chen, Jhih-Ci Jhong, Yu-Wen Chang, Sheng-Che Tseng, Bo-Chen Tsou, Da-Wei Sung, Hsu, S.K., Chiang, M.H., Shey-Shi Lu, Hsiao-Chin Chen, Ming-Chou Chiang, Shih-An Yu, Guo-Wei Huang
Publikováno v:
2005 Asia-Pacific Microwave Conference Proceedings; 2005, p4-4, 1p