Zobrazeno 1 - 10
of 184
pro vyhledávání: '"Boćkowski, Michal"'
Autor:
Kawka, Karol, Kempisty, Pawel, Sakowski, Konrad, Krukowski, Stanislaw, Bockowski, Michal, Bowler, David, Kusaba, Akira
Publikováno v:
J. Appl. Phys. 135, 225302 (2024)
On semiconductor growth surfaces, surface reconstructions appear. Estimation of the reconstructed structures is essential for understanding and controlling growth phenomena. In this study, the stability of a mixture of two different surface reconstru
Externí odkaz:
http://arxiv.org/abs/2402.06140
Autor:
Damilano, Benjamin, Aristégui, Rémi, Teisseyre, Henryk, Vézian, Stéphane, Guigoz, Vincent, Courville, Aimeric, Florea, Ileana, Vennéguès, Philippe, Bockowski, Michal, Guillet, Thierry, Vladimirova, Maria
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons ar
Externí odkaz:
http://arxiv.org/abs/2310.13323
Autor:
Starzonek, Szymon, Rzoska, Sylwester J., Drozd-Rzoska, Aleksandra, Bockowski, Michal, Pietrzak, Tomasz K., Garbarczyk, Jerzy E.
This paper presents results for systems formed in a solid glassy state after nanocrystallization process above the glass temperature. We analyze electric conductivity and relaxation processes after such treatment under high temperature (HT) and high
Externí odkaz:
http://arxiv.org/abs/2206.13300
Autor:
Sørensen, Søren S., Ge, Xuan, Micoulaut, Matthieu, Shi, Ying, Juelsholt, Mikkel, Jensen, Kirsten M.Ø., Neuefeind, Jörg, Jensen, Lars R., Bockowski, Michal, Smedskjaer, Morten M.
Publikováno v:
In Journal of Materials Science & Technology 1 September 2024 192:54-64
Autor:
Yamaga, Mitsuo, Singh, Akhilesh K., Cameron, Douglas, Edwards, Paul R., Lorenz, Katharina, Kappers, Menno J., Boćkowski, Michal
Publikováno v:
In Journal of Luminescence June 2024 270
Autor:
Sierakowski, Kacper, Jaroszynska, Arianna, Jakiela, Rafal, Fijalkowski, Michal, Sochacki, Tomasz, Iwinska, Malgorzata, Turek, Marcin, Lorenz, Katharina, Bockowski, Michal
Publikováno v:
In Materials Science in Semiconductor Processing 1 March 2024 171
Autor:
Szpakiewicz-Szatan, Aleksander, Pietrzak, Tomasz K., Sierakowski, Kacper, Boćkowski, Michał, Rzoska, Sylwester J., Garbarczyk, Jerzy E., Starzonek, Szymon
Publikováno v:
In Materialia March 2024 33
Modeling of convective transport in crystallization of gallium nitride by basic ammonothermal method
Autor:
Zak, Marek, Kempisty, Pawel, Lucznik, Boleslaw, Grabianska, Karolina, Kucharski, Robert, Iwinska, Malgorzata, Bockowski, Michal
Publikováno v:
In Journal of Crystal Growth 1 February 2024 627
Autor:
Ito, Shin, Sato, Shin-ichiro, Boćkowski, Michał S., Deki, Manato, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Yoshida, Ken-ichi, Minagawa, Hideaki, Hagura, Naoto
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B February 2024 547
Autor:
Jakieła, Rafał, Sierakowski, Kacper, Sochacki, Tomasz, Iwińska, Małgorzata, Fijalkowski, Michał, Barcz, Adam, Boćkowski, Michał
Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by ha
Externí odkaz:
http://arxiv.org/abs/2001.07458