Zobrazeno 1 - 10
of 124
pro vyhledávání: '"Blick, R. H."'
Autor:
Singh, U. R., Prada, M., Strenzke, V., Bosnjak, B., Schmirander, T., Tiemann, L., Blick, R. H.
Publikováno v:
Phys. Rev. B 102, 245134 (2020)
The low-lying states of graphene contain exciting topological properties that depend on the interplay of different symmetry breaking terms. The corresponding energy gaps remained unexplored until recently, owing to the low energy scale of the terms i
Externí odkaz:
http://arxiv.org/abs/2006.04190
Akademický článek
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Akademický článek
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We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We find that t
Externí odkaz:
http://arxiv.org/abs/0904.2592
Publikováno v:
IEEE Trans. Nanotech. 6, 446 (2007)
We investigate the relationship between electronics and geometry in a nonplanar SiGe/Si resonant quantum cavity (RQC) subject to a magnetic field. The transfer matrix technique originally due to Usuki and coworkers (Phys. Rev. B 52, 8244 1995) has be
Externí odkaz:
http://arxiv.org/abs/0806.4343
We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation in this r
Externí odkaz:
http://arxiv.org/abs/0801.4898
Autor:
Simmons, C. B., Thalakulam, Madhu, Shaji, Nakul, Klein, Levente J., Qin, Hua, Blick, R. H., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Appl Phys Lett (2007) vol. 91 pp. 213103
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electro
Externí odkaz:
http://arxiv.org/abs/0710.3725
Autor:
Shaji, Nakul, Simmons, C. B., Thalakulam, Madhu, Klein, Levente J., Qin, Hua, Luo, H., Savage, D. E., Lagally, M. G., Rimberg, A. J., Joynt, R., Friesen, M., Blick, R. H., Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Nature Physics v4, pp540-544 (2008)
Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advance
Externí odkaz:
http://arxiv.org/abs/0708.0794
Autor:
Slinker, K A, Lewis, K L M, Haselby, C C, Goswami, S, Klein, L J, Chu, J O, Coppersmith, S N, Joynt, Robert, Blick, R H, Friesen, Mark, Eriksson, M A
Publikováno v:
New Journal of Physics v7, p246 (2005)
We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modul
Externí odkaz:
http://arxiv.org/abs/cond-mat/0508107
Autor:
Klein, L. J., Lewis, K. L. M., Slinker, K. A., Goswami, Srijit, van der Weide, D. W., Blick, R. H., Mooney, P. M., Chu, J. O., Coppersmith, S. N., Friesen, Mark, Eriksson, Mark A.
Publikováno v:
Journal of Applied Physics v99, p023509 (2006)
The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be ca
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503766