Zobrazeno 1 - 10
of 1 291
pro vyhledávání: '"Blasco, R."'
Autor:
Sun, M., Blasco, R., de la Mata, M., Molina, S. I., Ajay, A., Monroy, E., Valdueza-Felip, S., Naranjo, F. B.
Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, wh
Externí odkaz:
http://arxiv.org/abs/2112.12890
Autor:
Notario-Barandiaran, L., Irizar, A., Begoña-Zubero, M., Soler-Blasco, R., Riutort-Mayol, G., Fernández-Somoano, A., Tardón, A., Casas, M., Vrijheid, M., Meharg, A., Carey, M., Meharg, C., Ralphs, K., McCreanor, C., Grimalt, J.O., Vioque, J., Signes-Pastor, A.J.
Publikováno v:
In Environmental Research 15 September 2023 233
Publikováno v:
Current Applied Physics 20 (11), 1244 (2020)
Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaic devices thanks to their wide direct bandgap energy that covers the solar spectrum from 0.7 eV (InN) to 6.2 eV (AlN), and their superior resistance to high temperatures and
Externí odkaz:
http://arxiv.org/abs/1911.08223
Publikováno v:
Materials Science in Semiconductor Processing, Volume 100, September 2019, Pages 8-14
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300{\deg}C). Their structural, chemical and optical properties are in
Externí odkaz:
http://arxiv.org/abs/1909.12068
Autor:
Blasco, R., Ajay, A., Robin, E., Bougerol, C., Lorentz, K., Alves, L. C., Mouton, I., Amichi, L., Grenier, A., Monroy, E.
Publikováno v:
R Blasco et al 2019 J. Phys. D: Appl. Phys. 52 125101
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford backscattering
Externí odkaz:
http://arxiv.org/abs/1810.11108
Autor:
Valdueza-Felip, S., Núñez-Cascajero, A., Blasco, R., Montero, D., Grenet, L., de la Mata, M., Fernández, S., Marcos, L. Rodríguez-De, Molina, S. I., Olea, J., Naranjo, F. B.
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm
Externí odkaz:
http://arxiv.org/abs/1808.01117
Autor:
Serna-Blasco, R., Sánchez-Herrero, E., Sanz-Moreno, S., Rodriguez-Festa, A., García-Veros, E., Casarrubios, M., Sierra-Rodero, B., Laza-Briviesca, R., Cruz-Bermúdez, A., Mielgo-Rubio, X., Sánchez-Hernández, A., Uribelarrea, E.A., Calvo, V., Romero, A., Provencio, M.
Publikováno v:
In ESMO Open October 2021 6(5)
Publikováno v:
In Current Applied Physics November 2020 20(11):1244-1252
Autor:
Carrión, J.S., Ochando, J., Fernández, S., Blasco, R., Rosell, J., Munuera, M., Amorós, G., Martín-Lerma, I., Finlayson, S., Giles, F., Jennings, R., Finlayson, G., Giles-Pacheco, F., Rodríguez-Vidal, J., Finlayson, C.
Publikováno v:
In Review of Palaeobotany and Palynology December 2018 259:63-80
Autor:
Núñez-Cascajero, A., Valdueza-Felip, S., Blasco, R., de la Mata, M., Molina, S.I., González-Herráez, M., Monroy, E., Naranjo, F.B.
Publikováno v:
In Journal of Alloys and Compounds 15 November 2018 769:824-830