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When CEOs adapt: An investigation of manager experience, policy and performance following recessions
Autor:
Blank, D. Brian, Hadley, Brandy
Publikováno v:
In Journal of Corporate Finance December 2021 71
Autor:
Amador Nelke S; Faculty of Industrial Engineering and Technology Management, Holon Institute of Technology, Holon 5810201, Israel.; Information System Program, School of Science and Technology, Ono Academic College, Kiryat Ono 5500000, Israel., Kohen-Vacs D; Faculty of Instructional Technologies, Holon Institute of Technology, Holon 5810201, Israel., Khomyakov M; Faculty of Industrial Engineering and Technology Management, Holon Institute of Technology, Holon 5810201, Israel., Rosienkiewicz M; Department of Laser Technologies, Automation and Production Management, Wroclaw University of Science and Technology, Lukasiewicza 5, 50-370 Wroclaw, Poland.; Institute of Technology Transfer Sp. z o.o., Na Grobli 15, 50-421 Wroclaw, Poland., Helman J; Department of Laser Technologies, Automation and Production Management, Wroclaw University of Science and Technology, Lukasiewicza 5, 50-370 Wroclaw, Poland.; Institute of Technology Transfer Sp. z o.o., Na Grobli 15, 50-421 Wroclaw, Poland., Cholewa M; Department of Laser Technologies, Automation and Production Management, Wroclaw University of Science and Technology, Lukasiewicza 5, 50-370 Wroclaw, Poland., Molasy M; Department of Laser Technologies, Automation and Production Management, Wroclaw University of Science and Technology, Lukasiewicza 5, 50-370 Wroclaw, Poland.; Institute of Technology Transfer Sp. z o.o., Na Grobli 15, 50-421 Wroclaw, Poland., Górecka A; Department of Laser Technologies, Automation and Production Management, Wroclaw University of Science and Technology, Lukasiewicza 5, 50-370 Wroclaw, Poland., Gómez-González JF; Departamento de Ingeniería Industrial, Escuela Superior de Ingeniería y Tecnología, Universidad de La Laguna, 30206 San Cristóbal de La Laguna, Spain., Bourgain M; EPF-Graduate School of Engineering, 55 Avenue du Président Wilson, 94230 Cachan, France.; Institut de Biomécanique Humaine Georges Charpak, Arts et Métiers Institute of Technology, IBHGC, 75013 Paris, France., Sagar A; Centria University of Applied Sciences, Vierimaantie 7, 84100 Ylivieska, Finland., Berselli G; Department of Mechanical Engineering, Energetics, Management and Transportation, University of Genoa, Via all'Opera Pia 15/A, 16145 Genova, Italy.; Department of Advanced Robotics, Istituto Italiano di Tecnologia, Via S. Quirico 19d, 16163 Genova, Italy., Blank D; Department of Information, Universidad Blas Pascal, Córdoba 5147, Argentina., Winokur M; Faculty of Industrial Engineering and Technology Management, Holon Institute of Technology, Holon 5810201, Israel., Benis A; Faculty of Industrial Engineering and Technology Management, Holon Institute of Technology, Holon 5810201, Israel.; Department of Digital Medical Technologies, Holon Institute of Technology, Holon 5810201, Israel.
Publikováno v:
Sensors (Basel, Switzerland) [Sensors (Basel)] 2024 Oct 04; Vol. 24 (19). Date of Electronic Publication: 2024 Oct 04.
Autor:
Tuttle Z; The Ritchie Centre, Monash University, Clayton, VIC, Australia. zatuttle@gmail.com., Roberts C; The Ritchie Centre, Monash University, Clayton, VIC, Australia.; Hudson Institute of Medical Research, Monash University, Clayton, VIC, Australia., Davis P; Women's Newborn Research Centre, The Royal Women's Hospital, Parkville, VIC, Australia., Malhotra A; The Ritchie Centre, Monash University, Clayton, VIC, Australia.; Hudson Institute of Medical Research, Monash University, Clayton, VIC, Australia., Tan K; The Ritchie Centre, Monash University, Clayton, VIC, Australia.; Hudson Institute of Medical Research, Monash University, Clayton, VIC, Australia., Bhatia R; The Ritchie Centre, Monash University, Clayton, VIC, Australia., Zhou L; The Ritchie Centre, Monash University, Clayton, VIC, Australia., Baker E; Women's Newborn Research Centre, The Royal Women's Hospital, Parkville, VIC, Australia., Hodgson K; Women's Newborn Research Centre, The Royal Women's Hospital, Parkville, VIC, Australia., Blank D; The Ritchie Centre, Monash University, Clayton, VIC, Australia.; Hudson Institute of Medical Research, Monash University, Clayton, VIC, Australia.
Publikováno v:
Pediatric research [Pediatr Res] 2024 Sep; Vol. 96 (4), pp. 983-989. Date of Electronic Publication: 2024 Mar 22.
Akademický článek
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Autor:
Gray, A. X., Minár, J., Plucinski, L., Huijben, M., Bostwick, A., Rotenberg, E., Yang, S. -H., Braun, J., Winkelmann, A., Conti, G., Eiteneer, D., Rattanachata, A., Greer, A. A., Ciston, J., Ophus, C., Rijnders, G., Blank, D. H. A., Doennig, D., Pentcheva, R., Schneider, C. M., Ebert, H., Fadley, C. S.
Angle-resolved photoemission spectroscopy (ARPES) is a powerful technique for the study of electronic structure, but it lacks a direct ability to study buried interfaces between two materials. We address this limitation by combining ARPES with soft x
Externí odkaz:
http://arxiv.org/abs/1309.2022
Autor:
Slooten, E., Zhong, Zhicheng, Molegraaf, H. J. A., Eerkes, P. D., de Jong, S., Massee, F., van Heumen, E., Kruize, M. K., Wenderich, S., Kleibeuker, J. E., Gorgoi, M., Hilgenkamp, H., Brinkman, A., Huijben, M., Rijnders, G., Blank, D. H. A., Koster, G., Kelly, P. J., Golden, M. S.
A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d state
Externí odkaz:
http://arxiv.org/abs/1301.2179
Autor:
McCollam, A., Wenderich, S., Kruize, M. K., Guduru, V. K., Molegraaf, H. J. A., Huijben, M., Koster, G., Blank, D. H. A., Rijnders, G., Brinkman, A., Hilgenkamp, H., Zeitler, U., Maan, J. C.
We have performed high field magnetotransport measurements to investigate the interface electron gas in LaAlO3/SrTiO3 heterostructures. Shubnikov-de Haas oscillations reveal several 2D conduction subbands with carrier effective masses between 1 and 3
Externí odkaz:
http://arxiv.org/abs/1207.7003
A chemical etching method was developed for (110) and (001) NdGaO3 single crystal substrates in order to obtain an atomically flat GaO2-x - terminated surface. Depending on the surface step density the substrates were etched in pH-controlled NH4F- or
Externí odkaz:
http://arxiv.org/abs/1202.2256