Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Blandine Minghetti"'
Autor:
Viorel Balan, Florent Michel, Ivanie Mendes, Celine Lapeyre, Lionel Vignoud, Ronald Otten, Orion Mouraille, Leon van Dijk, Blandine Minghetti, Jerome Depre, Richard J. F. van Haren
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Autor:
Richard J. F. van Haren, Suwen Li, Blandine Minghetti, Leon van Dijk, Klaas Brantjes, Frank Fournel, Gaelle Mauguen, Ivanie Mendes, Celine Lapeyre, Marie-Line Pourteau, Michael May, Laurent Pain, Karine Abadie, Thomas Plach, Markus Wimplinger
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Autor:
Joungchel Lee, Pui L. Lam, Blandine Minghetti, Céline Lapeyre, Michael J. May, Yoann Blancquaert, Jerome Depre
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Reducing the overlay error between stacked layers is key to enabling higher pattern density and thus moving towards high performance and more cost effective devices. However, as for specific applications like macrochips with photonic interconnects an
Autor:
Woong Jae Chung, Blandine Minghetti, Rajan Mali, Gregory Hart, Pavan Samudrala, Nyan Aung, Lokesh Subramany, Haiyong Gao, Seva Khikhlovskyi, Pieter Heres, Yen-Jen Chen
Publikováno v:
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Wafers at FBEOL layers traditionally have higher stress and larger alignment signal variability. ASML's ATHENA sensor based scanners, commonly used to expose FBEOL layers, have large spot size (∼700um). Hence ATHENA captures the signal from larger
Autor:
Pavan Samudrala, Shawn Lee, Blandine Minghetti, Lokesh Subramany, Delvigne Erik Henri Adriaan, Woong Jae Chung, Haiyong Gao, Seung Chul Oh, Nyan Aung
Publikováno v:
SPIE Proceedings.
With continuous shrink in feature dimensions, overlay tolerance for fabrication of transistors is getting more stringent. Achieving good overlay is extremely critical in getting good yield in HVM environment. It is widely understood that good alignme
Autor:
Nyan Aung, Pavan Samudrala, Gregory Hart, Woong Jae Chung, Blandine Minghetti, Haiyong Gao, Seva Khikhlovskyi, Yen-Jen Chen, Rajan Mali, Lokesh Subramany, Pieter Heres
Publikováno v:
SPIE Proceedings.
Wafers at FBEOL layers traditionally have higher stress and larger alignment signal variability. ASML’s ATHENA sensor based scanners, commonly used to expose FBEOL layers, have large spot size (~700um). Hence ATHENA captures the signal from larger
Autor:
Nyan Aung, Pavan Samudrala, Haiyong Gao, Blandine Minghetti, Woong Jae Chung, Lokesh Subramany, Shawn Lee, Juan Manuel Gomez
Publikováno v:
SPIE Proceedings.
To further shrink the contact and trench dimensions, Negative Tone Development (NTD) has become the de facto process at these layers. The NTD process uses a positive tone resist and an organic solvent-based negative tone developer which leads to impr
Autor:
J. Todeschini, B. Icard, S. Manakli, M. Jurdit, Laurent Pain, Blandine Minghetti, S. Leseuil, K. Docherty
Publikováno v:
Japanese Journal of Applied Physics. 45:6462-6467
Summary form only given. After the last successful results obtained these last years, EBDW (E-beam direct write) use for ASIC manufacturing is now demonstrated. However, throughput and resolution capabilities need to be improved to push its interest
Publikováno v:
Microelectronic Engineering. 83:749-753
The electron beam direct write (EBDW) lithography solution is already mature enough to be used for semiconductor manufacturing. This paper illustrates the potential of EBDW to support technology development as a patterning technique complementary to
Autor:
Timothy J. Wiltshire, Blandine Minghetti, Nelson Felix, Michael Pike, Christopher P. Ausschnitt, Vinayan C. Menon, Won Pil Kim, Sheldon Meyers
Publikováno v:
SPIE Proceedings.
Requirements for ever tightening overlay control are driving improvements in tool set up and matching procedures, APC processes, and wafer alignment techniques in an attempt to address both systematic and non systematic sources of overlay error. Ther