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of 10
pro vyhledávání: '"Blake Julian G"'
Publikováno v:
Solid State Technology. Jan98, Vol. 41 Issue 1, p56. 4p. 5 Graphs.
Autor:
Blake, Julian G., King, Michael C.
Publikováno v:
Solid State Technology. Jul97, Vol. 40 Issue 7, p253. 4p. 3 Diagrams, 1 Chart.
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:56-61
Sources and pathways for aluminium contamination in a high current ion implanter are studied by a set of experiments. Changes to implanter disk and beamline, the international introduction of tracer contaminants, and TRIM models of sputtered atom dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abc70833811b1e9e44a224570d5fde60
https://doi.org/10.1016/0168-583x(94)00454-4
https://doi.org/10.1016/0168-583x(94)00454-4
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:243-247
The value of in situ particle monitors for both manufacturing process control and process development in the semiconductor industry is receiving considerable recognition. This paper discusses the integration of a high yield technology (HYT) sensor in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf00ac132f713d4e0e1299b513c3d2a6
https://doi.org/10.1016/0168-583x(93)95052-7
https://doi.org/10.1016/0168-583x(93)95052-7
Oxygen implantation into silicon at 2.2-3.0E17cm -2 doses and energies 30-40keV has been successfully utilized to produce shallow silicon-on-insulator (SOI) layers using the separation by implantation of oxygen (SIMOX) technique. The SST films were a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1c6e0ad3e214416000c3d754255cd83
https://doi.org/10.1016/b978-0-444-81994-9.50083-x
https://doi.org/10.1016/b978-0-444-81994-9.50083-x
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 21:612-617
The use of rapid thermal processing (RTP) is expanding greatly in semiconductor processing. As demands on equipment become greater, the need to characterize system performance also increases. One aspect of RTP equipment performance which has proven d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c963937abb15f9bbd986c9a2fbad41b7
https://doi.org/10.1016/0168-583x(87)90921-9
https://doi.org/10.1016/0168-583x(87)90921-9
Publikováno v:
MRS Proceedings. 107
A cross-sectional transmission electron microscopy study has been performed on SIMOX wafers prepared using three sequential low dose (6 x 1017 cm2) oxygen implantations. After each implant the wafers were annealed using rapid thermal processing at te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72a202fb07d90f2c59967d4750021820
https://doi.org/10.1557/proc-107-61
https://doi.org/10.1557/proc-107-61
Publikováno v:
MRS Proceedings. 92
Slip is a primary concern in Rapid Thermal Processing (RTP). Diagnostics for slip are compared, including: visual inspection, differential interference contrast microscopy (Nomarski), X-ray topography, decorative etching and optical surface scanning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24924b7929961dba0f6b9f7034964e26
https://doi.org/10.1557/proc-92-265
https://doi.org/10.1557/proc-92-265
Akademický článek
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Autor:
Blake, Julian G.
Publikováno v:
American Journal of Physics; August 1975, Vol. 43 Issue: 8 p747-747, 1p