Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Blaise, Philippe"'
Autor:
Hung, Linda, Guedj, Cyril, Bernier, Nicolas, Blaise, Philippe, Olevano, Valerio, Sottile, Francesco
We present the valence electron energy-loss spectrum and the dielectric function of monoclinic hafnia (m-HfO$_2$) obtained from time-dependent density-functional theory (TDDFT) predictions and compared to energy-filtered spectroscopic imaging measure
Externí odkaz:
http://arxiv.org/abs/1601.08125
Autor:
Blaise, Philippe, Traore, Boubacar
We study the structural and electronic properties of various hafnium sub-oxides HfzO from z = 9 to z = 0.5, by ab initio simulation using Density Functional Theory. The stability of these sub-oxides is studied against monoclinic HfO2. The progressive
Externí odkaz:
http://arxiv.org/abs/1511.07665
Akademický článek
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Autor:
Guedj, Cyril, Hung, Linda, Zobelli, Alberto, Blaise, Philippe, Sottile, Francesco, Olevano, Valerio
Publikováno v:
Appl. Phys. Lett. 105, 222904 (2014)
The effect of nanocrystal orientation on the energy loss spectra of monoclinic hafnia (m-HfO$_2$) is measured by high resolution transmission electron microscopy (HRTEM) and valence energy loss spectroscopy (VEELS) on high quality samples. For the sa
Externí odkaz:
http://arxiv.org/abs/1410.3374
Publikováno v:
Physical Review Letters 110, 065502 (2013)
A tetragonal phase is predicted for Hf2O3 and Zr2O3 using density functional theory. Starting from atomic and unit cell relaxations of substoichiometric monoclinic HfO2 and ZrO2, such tetragonal structures are only reached at zero temperature by intr
Externí odkaz:
http://arxiv.org/abs/1210.3348
Autor:
Prodhomme, Pierre-Yves, Fontaine-Vive, Fabien, Der Geest, Abraam vand, Blaise, Philippe, Even, Jacky
Publikováno v:
Applied Physics Letters 99 (2011) 022101
Ab initio techniques are used to calculate the effective work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were
Externí odkaz:
http://arxiv.org/abs/1112.2163
Autor:
Hirchaou, Youssef, Sklénard, Benoît, Goes, Wolfgang, Blaise, Philippe, Triozon, François, Li, Jing
Publikováno v:
Applied Physics Letters; 1/29/2024, Vol. 124 Issue 5, p1-5, 5p
Autor:
Blaise, Philippe.
Diss. no. 8929 techn. sc. SFIT Zürich.
Externí odkaz:
http://e-collection.ethbib.ethz.ch/show?type=diss&nr=8929
Autor:
Blaise, Philippe
Th.--Chir. dent.--Nancy 1, 1985. N°: 43.
Externí odkaz:
http://catalogue.bnf.fr/ark:/12148/cb36110734t
Autor:
Traore, Boubacar, Blaise, Philippe, Sklenard, Benoit, Vianello, Elisa, Magyari-Kope, Blanka, Nishi, Yoshio
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (2), pp.507-513. ⟨10.1109/TED.2017.2785352⟩
IEEE Transactions on Electron Devices, 2018, 65 (2), pp.507-513. ⟨10.1109/TED.2017.2785352⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (2), pp.507-513. ⟨10.1109/TED.2017.2785352⟩
IEEE Transactions on Electron Devices, 2018, 65 (2), pp.507-513. ⟨10.1109/TED.2017.2785352⟩
International audience; We address the role of the Ti/HfO$_2$ interface on the conductive filament (CF) formation within the context of oxide-based resistive random access memories (OxRRAMs). We investigate oxygen defects formation and diffusion at t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::21b0f373a5ed7f6272dadff0a6ebedbe
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01709534
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01709534