Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Blaine J. Gross"'
Autor:
Scott K. Reynolds, Bodhisatwa Sadhu, Vibhor Jain, Peng Cheng, John J. Pekarik, David L. Harame, Thomas Kessler, Peter B. Gray, Panglijen Candra, Blaine J. Gross, K. Newton, Renata Camillo-Castillo, Arun Natarajan, Alberto Valdes-Garcia
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c99a09f745adb33977bcb63a31afabbb
https://doi.org/10.1109/bctm.2014.6981294
https://doi.org/10.1109/bctm.2014.6981294
Autor:
David L. Harame, John J. Pekarik, Vibhor Jain, Aaron L. Vallett, James W. Adkisson, Renata Camillo-Castillo, Bjorn Zetterlund, Qizhi Liu, Peter B. Gray, Adam W. Divergilio, Blaine J. Gross
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Peak f T of 660GHz is reported for HBT f T doubler designs in IBM 90nm SiGe BiCMOS technology 9HP. This high performance f T doubler utilizes a longer HBT for output stage compared to the input stage HBT (length ratio 2:1) resulting in improved trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d37f870a5919ae6cf15110cd35453118
https://doi.org/10.1109/bctm.2014.6981274
https://doi.org/10.1109/bctm.2014.6981274
Autor:
Scott K. Reynolds, Bodhisatwa Sadhu, Alberto Valdes-Garcia, Leonardo Vera, Adam W. Divergilio, David L. Harame, John J. Pekarik, Xiaowei Tian, N. Cahoon, John J. Ellis-Monaghan, Q.Z. Liu, Vibhor Jain, J. Lukaitis, Marwan H. Khater, Aaron L. Vallett, Peng Cheng, John R. Long, Peter B. Gray, Wooram Lee, Renata Camillo-Castillo, James W. Adkisson, Yi Zhao, Zhong-Xiang He, V. Kaushal, M. Kerbaugh, Bjorn Zetterlund, K. Newton, Blaine J. Gross
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f T and 360 GHz f MAX high performance SiGe HBTs, 135 GHz f T an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d16a05829f98760d3f419a2627c3feb
https://doi.org/10.1109/bctm.2014.6981293
https://doi.org/10.1109/bctm.2014.6981293
Autor:
Vibhor Jain, V. Kaushal, James W. Adkisson, Qizhi Liu, Peter B. Gray, David L. Harame, Renata Camillo-Castillo, Adam W. Divergilio, Peng Cheng, John J. Pekarik, Blaine J. Gross
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
High performance Schottky Barrier Diodes (SBDs) with cut-off frequency (fc) ~2.0 THz integrated into a 90nm SiGe BiCMOS technology for millimeter wave (mm-wave) applications are presented in this paper. To our knowledge, this is the highest reported
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4da3ca24e2b378baa359044d56d602d
https://doi.org/10.1109/bctm.2013.6798147
https://doi.org/10.1109/bctm.2013.6798147