Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Bjorn Zetterlund"'
Autor:
Renata Camillo-Castillo, Bjorn Zetterlund, Pekarik John J, Vibhor Jain, Peter B. Gray, Marwan H. Khater, Adam W. Divergilio, Michael L. Kerbaugh, Q.Z. Liu, James W. Adkisson, D. L. Harame
Publikováno v:
ECS Transactions. 64:285-294
Development of SiGe HBTs in BiCMOS technology with both high f T and f MAX faces significant challenges. To increase f T, thinning the base and collector thickness is generally the first step to reduce the carrier transit times, but this increases th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69b02641f1b8b2ba7829dd48493610e9
https://doi.org/10.1149/06406.0285ecst
https://doi.org/10.1149/06406.0285ecst
Autor:
Jack Pekarik, Peng Cheng, Peter B. Gray, Tom Gabert, David L. Harame, Joe Hasselbach, B. Leidy, Renata Camillo-Castillo, James Adkisson, Q.Z. Liu, Christa R. Willets, John J. Ellis-Monaghan, Vibhor Jain, Dae-Gyu Park, Kevin K. Chan, Jeff Gambino, John J. Benoit, Marwan H. Khater, Matt Tiersch, Bjorn Zetterlund
Publikováno v:
ECS Transactions. 50:121-127
A self-aligned sacrificial emitter (SASE) process has been successfully developed in a BiCMOS technology. Selective epitaxy of SiGe originally developed for sub-100 nm CMOS nodes is used for a raised extrinsic base. Process integration includes build
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83feee984d4b34eae9b051eb842f481
https://doi.org/10.1149/05009.0121ecst
https://doi.org/10.1149/05009.0121ecst
Autor:
David L. Harame, John J. Pekarik, Vibhor Jain, Aaron L. Vallett, James W. Adkisson, Renata Camillo-Castillo, Bjorn Zetterlund, Qizhi Liu, Peter B. Gray, Adam W. Divergilio, Blaine J. Gross
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Peak f T of 660GHz is reported for HBT f T doubler designs in IBM 90nm SiGe BiCMOS technology 9HP. This high performance f T doubler utilizes a longer HBT for output stage compared to the input stage HBT (length ratio 2:1) resulting in improved trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d37f870a5919ae6cf15110cd35453118
https://doi.org/10.1109/bctm.2014.6981274
https://doi.org/10.1109/bctm.2014.6981274
Autor:
Scott K. Reynolds, Bodhisatwa Sadhu, Alberto Valdes-Garcia, Leonardo Vera, Adam W. Divergilio, David L. Harame, John J. Pekarik, Xiaowei Tian, N. Cahoon, John J. Ellis-Monaghan, Q.Z. Liu, Vibhor Jain, J. Lukaitis, Marwan H. Khater, Aaron L. Vallett, Peng Cheng, John R. Long, Peter B. Gray, Wooram Lee, Renata Camillo-Castillo, James W. Adkisson, Yi Zhao, Zhong-Xiang He, V. Kaushal, M. Kerbaugh, Bjorn Zetterlund, K. Newton, Blaine J. Gross
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f T and 360 GHz f MAX high performance SiGe HBTs, 135 GHz f T an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d16a05829f98760d3f419a2627c3feb
https://doi.org/10.1109/bctm.2014.6981293
https://doi.org/10.1109/bctm.2014.6981293
Autor:
David L. Harame, Peng Cheng, Qizhi Liu, V. Kaushal, James W. Adkisson, Renata Camillo-Castillo, John J. Pekarik, Peter B. Gray, Thomas Kessler, Bjorn Zetterlund, Vibhor Jain
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Impact of mutual thermal coupling on the performance of a single 90nm SiGe heterojunction bipolar transistor (HBT) due to the presence of power dissipating elements like other HBTs in near vicinity is presented in this paper. Mutual thermal resistanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da02721e847e6a53b1ec7b72b0de7870
https://doi.org/10.1109/bctm.2013.6798134
https://doi.org/10.1109/bctm.2013.6798134
Autor:
John J. Pekarik, Marwan H. Khater, Bjorn Zetterlund, James W. Adkisson, C. Parrish, Vibhor Jain, Renata Camillo-Castillo, David L. Harame, A. Pyzyna, Christa R. Willets, Robert K. Leidy, Peter B. Gray, Sebastian Engelmann, Peng Cheng, Jeff Gambino, Q.Z. Liu
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Scaling both the fT and the fMAX of SiGe HBTs is quite challenging due to the opposing physical device requirements for improving these figures of merit. In this paper, millisecond anneal techniques, low temperature silicide and low temperature conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3022e86af25d7bcfb880d8717fa3dd75
https://doi.org/10.1109/bctm.2013.6798182
https://doi.org/10.1109/bctm.2013.6798182
Autor:
Marwan H. Khater, Keith Macha, Bob Liedy, Renata Camillo-Castillo, John J. Pekarik, Philip V. Kaszuba, Qizhi Liu, Bjorn Zetterlund, Leon Moszkowicz, Peng Cheng, James W. Adkisson, Kurt A. Tallman, Peter B. Gray, David L. Harame
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
In this paper, we discuss a novel technique to reduce base resistance (R b ) and collector-base capacitance (C cb ) for higher F max in high-speed SiGe HBTs. In order to reduce C cb , we first located the origins of the different components of C cb t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30d6c150efa618b96296cd6b8a710943
https://doi.org/10.1109/bctm.2012.6352616
https://doi.org/10.1109/bctm.2012.6352616
Autor:
Qizhi Liu, Bjorn Zetterlund, John Ellis Monaghan, Nelson E. Lourenco, Kurt A. Moen, John J. Pekarik, John D. Cressler, Aaron L. Vallett, S.D. Phillips, James W. Adkisson, Renata Camillo-Castillo, Troy D. England, Peter B. Gray, Marwan H. Khater, V. Kaushal, David L. Harame, Vibhor Jain, Peng Cheng, Robert L. Schmid
Publikováno v:
2012 IEEE Radiation Effects Data Workshop.
The total ionizing dose and laser-induced transient response of a new 4th generation 90 nm IBM SiGe 9HP technology are investigated. Total dose testing was performed with 63.3 MeV protons at the Crocker Nuclear Laboratory at the University of Califor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f13f4faf50c9172d9ddc36c62959a06
https://doi.org/10.1109/redw.2012.6353734
https://doi.org/10.1109/redw.2012.6353734
Autor:
Qizhi Liu, James W. Adkisson, Peng Cheng, John J. Ellis-Monaghan, Mattias E. Dahlstrom, John J. Pekarik, Renata Camillo-Castillo, Peter B. Gray, Bjorn Zetterlund, David L. Harame, Ljubo Radic
Publikováno v:
2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
In this paper, we investigate the emitter resistance R e in SiGe HBTs with speeds up to 280GHz, using a U-shaped polysilicon emitter. We observed that R e increased with lateral scaling, thereby degrading f T . Although a negligible component in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ba8ac16f21d740f73f70f6457fb3b1
https://doi.org/10.1109/bctm.2011.6082770
https://doi.org/10.1109/bctm.2011.6082770