Zobrazeno 1 - 10
of 121
pro vyhledávání: '"Bjørn-Ove Fimland"'
Autor:
Aleksander Buseth Mosberg, Dingding Ren, Lyubomir Ahtapodov, Helge Weman, Bjørn-Ove Fimland, Antonius van Helvoort
Publikováno v:
Nanotechnology.
To exploit the promising properties of semiconductor nanowires and ensure the uniformity required to achieve device integration, their position on the growth substrate must be controlled. This work demonstrates the direct patterning of a SiO2/Si subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de0a9bca32e2e88e7a7697e8af892677
https://doi.org/10.1088/1361-6528/acd2e1
https://doi.org/10.1088/1361-6528/acd2e1
Autor:
Bjørn-Ove Fimland, Dong Chul Kim, A. Mazid Munshi, Jungtae Nam, Dong Hoon Shin, Keun Soo Kim, Sangwook Lee, Anjan Mukherjee, D L Dheeraj, Hoyeol Yun, Helge Weman
Publikováno v:
ACS Applied Materials & Interfaces. 11:13514-13522
We developed a new technique to fabricate single nanowire devices with reliable graphene/nanowire contacts using a position-controlled microtransfer and an embedded nanowire structure in a planar junction configuration. A thorough study of electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e522acfe48f67f72e50be8f6a518605
https://doi.org/10.1021/acsami.8b20581
https://doi.org/10.1021/acsami.8b20581
Autor:
Bjørn-Ove Fimland, Katsumi Kishino, Lyubomir Ahtapodov, Andreas Liudi Mulyo, Ida Marie Høiaas, Dong Chul Kim, Helge Weman, Per Erik Vullum
Publikováno v:
Nano letters
The many outstanding properties of graphene have impressed and intrigued scientists for the last few decades. Its transparency to light of all wavelengths combined with a low sheet resistance makes it a promising electrode material for novel optoelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc09105d70774320e2072982b175e9c1
https://doi.org/10.1021/acs.nanolett.8b04607
https://doi.org/10.1021/acs.nanolett.8b04607
Publikováno v:
ACS Photonics
Here we demonstrate a more effective use of III–V photoconversion material to achieve an ultrahigh power-per-weight ratio from a solar cell utilizing an axial p-i-n junction GaAs/AlGaAs nanowire (NW) array grown by molecular beam epitaxy on a Si su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a001651f0d1152f15a1bffe508a009b3
https://hdl.handle.net/11250/3027098
https://hdl.handle.net/11250/3027098
Autor:
Per Erik Vullum, Andreas Liudi Mulyo, Helge Weman, Bjørn-Ove Fimland, Katsumi Kishino, Mohana K. Rajpalke
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-12 (2020)
Liudi Mulyo, A, Rajpalke, M K, Vullum, P E, Weman, H, Kishino, K & Fimland, B-O 2020, ' The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene ', Scientific Reports, vol. 10, no. 1, 853 . https://doi.org/10.1038/s41598-019-55424-z
Scientific Reports, Vol 10, Iss 1, Pp 1-12 (2020)
Liudi Mulyo, A, Rajpalke, M K, Vullum, P E, Weman, H, Kishino, K & Fimland, B-O 2020, ' The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene ', Scientific Reports, vol. 10, no. 1, 853 . https://doi.org/10.1038/s41598-019-55424-z
GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Due to the weak nucleation on graphene, instead
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d27532bd0b0f9007376d16cae46d78c
http://europepmc.org/articles/PMC6972738
http://europepmc.org/articles/PMC6972738
Autor:
Per Erik Vullum, Mohana K. Rajpalke, Randi Holmestad, Bjørn-Ove Fimland, Jian-Min Zuo, Yu-Tsun Shao, Turid Worren Reenaas, Maryam Vatanparast
Publikováno v:
Ultramicroscopy
Nitrogen (N) is a common element added to GaAs for band gap engineering and strain compensation. However, detection of small amounts of N is difficult for electron microscopy as well as for other chemical analysis techniques. In this work, N in GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a99ac9296bef89524e72497156f2658b
https://doi.org/10.1016/j.ultramic.2021.113299
https://doi.org/10.1016/j.ultramic.2021.113299
Autor:
Andreas Liudi Mulyo, Julie S. Nilsen, Helge Weman, Yuta Konno, Bjørn-Ove Fimland, Antonius T. J. van Helvoort, Katsumi Kishino
Publikováno v:
Journal of Crystal Growth. 480:67-73
We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N2 flow rate on the structural and optical properties are studied. At optimum growth conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c71e467455aa12bd66f412ac3100086c
https://doi.org/10.1016/j.jcrysgro.2017.10.009
https://doi.org/10.1016/j.jcrysgro.2017.10.009
Autor:
Ilia Kolevatov, Edouard Monakhov, Lasse Vines, Thanh-Nam Tran, Bjørn-Ove Fimland, Saroj Kumar Patra
Publikováno v:
Journal of Crystal Growth
Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature Hall effect measurements, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a73ef32607c3576c19e629b9f6d0b11
https://doi.org/10.1016/j.jcrysgro.2017.01.035
https://doi.org/10.1016/j.jcrysgro.2017.01.035
Autor:
Dingding Ren, Antonius T. J. van Helvoort, Helge Weman, Lyubomir Ahtapodov, Bjørn-Ove Fimland
Epitaxially grown ternary III-arsenide-antimonide (III-As-Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6be2b5197160dcf02b37deead0ec707e
http://hdl.handle.net/11250/2607753
http://hdl.handle.net/11250/2607753
Autor:
Bjørn-Ove Fimland, A. Mazid Munshi, Dingding Ren, Julie S. Nilsen, Helge Weman, J F Reinertsen, Antonius T. J. van Helvoort, Anders Gustafsson, D L Dheeraj, Chengjun Jin, Junghwan Huh
Publikováno v:
Nano Letters. 16:1201-1209
Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ad59236bd0c117b8e06060a5014cc54
https://doi.org/10.1021/acs.nanolett.5b04503
https://doi.org/10.1021/acs.nanolett.5b04503