Výsledky vyhledávání - "Bizouerne, M."

Ultra-high selective etching in remote plasmas: application to smart etch processes

Autor: Cunge, G., Camille Petit-Etienne, Vallier, L., Dubois, J., Soriano, R., Prevost, E., Martirosyan, V., Chambettaz, F., Bizouerne, M., Bellegarde, C., Raynal, P., Renaud, V., Pargon, E., Despiau−pujo, E., Bisserier, J., Buttet, C., Lagrasta, S.

Publikováno v: PESM 2017 (Plasma Etch and Strip in Microtechnology)
PESM 2017 (Plasma Etch and Strip in Microtechnology), 2017, Louvain, Belgium
HAL

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::536700273baf4ee9112b65d9a0270fef
https://hal.univ-grenoble-alpes.fr/hal-01891297

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Development of plasma etching processes for the integration of III-V semicondutors as trigate nMOSFET’s channels

Autor: Bizouerne, M., Pargon, E., Burtin, P., Camille Petit-Etienne, Latu-Romain, E., Labau, S., Arnaud, S., David, S., Martin, M., Billaud, M.

Publikováno v: Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop
Plasma Etch and Strip in Microelectronics (PESM), 9th International Workshop, May 2016, Grenoble, France
HAL

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::71ff871405ffd97887aca063b2565481
https://hal.univ-grenoble-alpes.fr/hal-01882457

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Development of plasma etching processes for the integration of III-V materials on Si for photonic and CMOS applications

Autor: Pargon, E., Bizouerne, M., Gay, G., Camille Petit-Etienne, Burtin, P., Brihoum, M., Barnola, S.

Publikováno v: SPIE advanced lithography, Advanced Etch Technology for Nanopatterning V, Conference 9782
SPIE advanced lithography, Advanced Etch Technology for Nanopatterning V, Conference 9782, Feb 2016, San Jose, United States
HAL

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a9025071231dc933c1be10ad5825a1a5
https://hal.univ-grenoble-alpes.fr/hal-01882458

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Plasma etching processes for the integration of InP based compounds on 200mm Si wafer for photonic applications

Autor: Lin, Qinghuang, Engelmann, Sebastian, Pargon, E., Gay, G., Petit-Etienne, C., Brihoum, M., Bizouerne, M., Burtin, P., Barnola, S.

Publikováno v: SPIE Advanced Lithography
SPIE Advanced Lithography, 2016, San Jose, United States. ⟨10.1117/12.2221903⟩

Ar/Cl2/CH4 gas mixture has been investigated for the development of plasma etching process dedicated to the patterning of 3μm-deep InP structures integrated on 200mm SiO2 carrier wafer. The plasma process requirements are: high InP etch rates (>500n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0935732f18dba568b78e2fd7d17656b
https://hal.univ-grenoble-alpes.fr/hal-01882440

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Akademický článek

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InGaAs finFET patterning with damage free plasma etching process for the 5nm technological node

Autor: Bizouerne, M., Pargon, E., Burtin, P., Camille Petit-Etienne, Latu-Romain, E., Labau, S., David, S., Martin, M.

Publikováno v: HAL
65th International AVS Symposium & Topical Conferences
65th International AVS Symposium & Topical Conferences, Nov 2016, Nashville, USA, United States

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::914f7a420a05d4ef3b96f0a196e92d88
https://hal.univ-grenoble-alpes.fr/hal-01882768

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Damage Free Plasma Etching Processes of III-V Semiconductors for Microelectronic and Photonic Applications

Autor: Pargon, E., Bizouerne, M., Camille Petit-Etienne, Vallier, L., Gay, G., Fahed, M., Rovayaz, K., Fouchier, M., Bellegarde, C., Renaud, V., Cunge, G., Joubert, O., Martinez, E., Rochat, N.

Publikováno v: HAL
64th International AVS Symposium & Topical Conferences
64th International AVS Symposium & Topical Conferences, Nov 2017, Tampa Floride, United States

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::65d09ddc024c407ae8bbc8c3694bc504
https://hal.univ-grenoble-alpes.fr/hal-01891260

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Conference

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Akademický článek

A model and simulation strategy for fatigue damage evolution of copper films.

Autor: Sun, Bin

Publikováno v: Journal of the Brazilian Society of Mechanical Sciences & Engineering; May2021, Vol. 43 Issue 5, p1-11, 11p

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