Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Biyun L. Jackson"'
Autor:
Wei Zhang, Biyun L. Jackson, Ke Sun, Jae Young Lee, Shyh-Jer Huang, Hsin-Chieh Yu, Sheng-Po Chang, Shoou-Jinn Chang, Ya-Hong Xie
Publikováno v:
International Journal of Photoenergy, Vol 2015 (2015)
The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3 nanoclusters are confined in the nanosize pits with well-defined shape and dimension permittin
Externí odkaz:
https://doaj.org/article/5c13c8ebd29943d1814076eca364fdc7
Publikováno v:
ECS Transactions. 33:375-382
Bonding techniques for direct wafer bonding of III-V materials by various sulfur passivation treatments are presented. A dry sulfur passivation method utilizing elemental sulfur vapor activated by ultraviolet light in high vacuum is adapted for use i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb4cc3228aeba595d734e054c92b5ca3
https://doi.org/10.1149/1.3483527
https://doi.org/10.1149/1.3483527
Autor:
Biyun L. Jackson, Ke Sun, Sheng Po Chang, Ya-Hong Xie, Shyh-Jer Huang, Hsin-Chieh Yu, Jae Young Lee, Wei Zhang, Shoou-Jinn Chang
Publikováno v:
Zhang, W; Jackson, BL; Sun, K; Lee, JY; Huang, SJ; Yu, HC; et al.(2015). Scalability of Phase Change Materials in Nanostructure Template. International Journal of Photoenergy, 2015. doi: 10.1155/2015/253296. UCLA: Retrieved from: http://www.escholarship.org/uc/item/2dr6n0bv
International Journal of Photoenergy, Vol 2015 (2015)
International Journal of Photoenergy, Vol 2015 (2015)
The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8123d07d7030cb3b8b94c7f718ad202
Autor:
N. Bodzin, Biyun L. Jackson, Richard R. King, Mark S. Goorsky, Michael Jackson, A. Zakaira, X-Q. Liu
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
A focused ion beam (FIB) sample preparation technique is developed to produce very large areas of electron transparent material for plan-view transmission electron microscopy measurements from specific layers in a multi-layer device structure. An ini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96f1481002a8774744f21e2b84c66a29
https://doi.org/10.1109/pvsc.2012.6317906
https://doi.org/10.1109/pvsc.2012.6317906
Autor:
Lei Wang, Shyh-Jer Huang, Ding Li, Biyun L. Jackson, Tianshu Sun, Hsiao Chiu Hsu, Wei Zhang, Shoou-Jinn Chang, Peichi Liu, Xiaodong Hu, Ya-Hong Xie, Yan-Kuin Su, Lei Li
Publikováno v:
Journal of Applied Physics. 113:144908
A novel serpentine channel structure is used to mask the sapphire substrate for the epitaxial growth of dislocation-free GaN. Compared to the existing epitaxial lateral overgrowth methods, the main advantages of this novel technique are: (a) one-step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d9183163096470f3aeac3e00e1dd64c
https://doi.org/10.1063/1.4799600
https://doi.org/10.1063/1.4799600
Publikováno v:
Journal of Applied Physics. 110:104903
Sulfur passivation and subsequent wafer-bonding treatments are demonstrated for III–V semiconductor applications using GaAs–GaAs direct wafer-bonded structures. Two different sulfur passivation processes are addressed. A dry sulfur passivation me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60d3a89fbca71a6b85e61efb93f958ba
https://doi.org/10.1063/1.3662144
https://doi.org/10.1063/1.3662144
Autor:
Ya-Hong Xie, Ke Sun, Wei Liu, Young-Ju Park, Biyun L. Jackson, Jason C. S. Woo, Congqin Miao, Choong-Heui Chung, Jing Zhu
Publikováno v:
ACS Nano. 5:2412-2412
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56e4487dab61462a07817c2287d7f138
https://doi.org/10.1021/nn200548f
https://doi.org/10.1021/nn200548f