Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Biyuan Zheng"'
Vapor growth of V-doped MoS2 monolayers with enhanced B-exciton emission and broad spectral response
Autor:
Biyuan Zheng, Xingxia Sun, Weihao Zheng, Chenguang Zhu, Chao Ma, Anlian Pan, Dong Li, Shengman Li
Publikováno v:
Frontiers of Optoelectronics, Vol 16, Iss 1, Pp 1-12 (2023)
Abstract Dynamically engineering the optical and electrical properties in two-dimensional (2D) materials is of great significance for designing the related functions and applications. The introduction of foreign-atoms has previously been proven to be
Externí odkaz:
https://doaj.org/article/2c06fd217253430f8556209c462cc226
Autor:
Lu Lin, Ying Liu, Wenqiang Wu, Lulu Huang, Xiaoli Zhu, Yunfei Xie, Huawei Liu, Biyuan Zheng, Jieyuan Liang, Xingxia Sun, Chenguang Zhu, Guangcheng Wu, Qin Shuai, Zhuorui Huang, Tinghao Wang, Dong Li, Anlian Pan
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 10, Pp n/a-n/a (2023)
Abstract Designing photodetectors (PDs) with fast response and low power consumption is important for the realization of photoelectric conversion in photoelectric integrated systems. The emerging metal halide perovskite is proven to be a promising ma
Externí odkaz:
https://doaj.org/article/f28653d020104878a7dd37040a468c51
Autor:
Chenguang Zhu, Huawei Liu, Wenqiang Wang, Li Xiang, Jie Jiang, Qin Shuai, Xin Yang, Tian Zhang, Biyuan Zheng, Hui Wang, Dong Li, Anlian Pan
Publikováno v:
Light: Science & Applications, Vol 11, Iss 1, Pp 1-10 (2022)
Energy-efficient artificial photonic synapse is designed based on photo-sensitive BP/CdS heterostructure device, which can be used for high-performance brain-inspired neuromorphic computing.
Externí odkaz:
https://doaj.org/article/9873d8d31e8d48aeaed00584409b84b9
Autor:
Yu Xiao, Junyu Qu, Ziyu Luo, Ying Chen, Xin Yang, Danliang Zhang, Honglai Li, Biyuan Zheng, Jiali Yi, Rong Wu, Wenxia You, Bo Liu, Shula Chen, Anlian Pan
Publikováno v:
Frontiers of Optoelectronics, Vol 15, Iss 1, Pp 1-8 (2022)
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs)
Externí odkaz:
https://doaj.org/article/0cf7924af93749ffb862443f407f86f6
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-29 (2021)
Abstract Van der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) generally possess a type-II band alignment that facilitates the formation of interlayer excitons between constituent monolayers. Manipulation of the interl
Externí odkaz:
https://doaj.org/article/1a953561c46841bbbac8a2af003e14e1
Autor:
Cyrine Ernandes, Lama Khalil, Hela Almabrouk, Debora Pierucci, Biyuan Zheng, José Avila, Pavel Dudin, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Thibault Brulé, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
Abstract In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct band gap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show
Externí odkaz:
https://doaj.org/article/4f5cee023c774f3f8aba36b5f4a4d72c
Autor:
Biyuan Zheng, Dong Li, Chenguang Zhu, Jianyue Lan, Xingxia Sun, Weihao Zheng, Huawei Liu, Xuehong Zhang, Xiaoli Zhu, Yexin Feng, Tao Xu, Litao Sun, Gengzhao Xu, Xiao Wang, Chao Ma, Anlian Pan
Publikováno v:
InfoMat, Vol 2, Iss 4, Pp 752-760 (2020)
Abstract Layered semiconductor heterostructures are essential elements in modern electronic and optoelectronic devices. Dynamically engineering the composition of these heterostructures may enable the flexible design of the properties of heterostruct
Externí odkaz:
https://doaj.org/article/61424a227ec447ff83f72a43be7a1530
Autor:
Tiefeng Yang, Biyuan Zheng, Zhen Wang, Tao Xu, Chen Pan, Juan Zou, Xuehong Zhang, Zhaoyang Qi, Hongjun Liu, Yexin Feng, Weida Hu, Feng Miao, Litao Sun, Xiangfeng Duan, Anlian Pan
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals
Externí odkaz:
https://doaj.org/article/65ffbcbc018d47a6a526655aba61c01a
Autor:
Weihao Zheng, Biyuan Zheng, Changlin Yan, Ying Liu, Xingxia Sun, Zhaoyang Qi, Tiefeng Yang, Ying Jiang, Wei Huang, Peng Fan, Feng Jiang, Wei Ji, Xiao Wang, Anlian Pan
Publikováno v:
Advanced Science, Vol 6, Iss 7, Pp n/a-n/a (2019)
Abstract 2D vertical van der Waals (vdW) heterostructures with atomically sharp interfaces have attracted tremendous interest in 2D photonic and optoelectronic applications. Band alignment engineering in 2D heterostructures provides a perfect platfor
Externí odkaz:
https://doaj.org/article/34aea2e9989748759ddbcab006818ab1
Autor:
Chengdong Yao, Guangcheng Wu, Mingqiang Huang, Wenqiang Wang, Cheng Zhang, Jiaxin Wu, Huawei Liu, Biyuan Zheng, Jiali Yi, Chenguang Zhu, Zilan Tang, Yizhe Wang, Ming Huang, Luying Huang, Ziwei Li, Li Xiang, Dong Li, Shengman Li, Anlian Pan
Publikováno v:
ACS Applied Materials & Interfaces. 15:23573-23582
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ae277bfab35ad4e6218287c370ca56e
https://doi.org/10.1021/acsami.3c00063
https://doi.org/10.1021/acsami.3c00063