Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Bivas Dutta"'
Autor:
Ron Aharon Melcer, Bivas Dutta, Christian Spånslätt, Jinhong Park, Alexander D. Mirlin, Vladimir Umansky
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
The transport behaviour of counter-propagating edge modes in the hole-conjugate fractional quantum Hall state is not fully understood. Here, by combining local noise thermometry and thermal conductance measurements, the authors show the absence of th
Externí odkaz:
https://doaj.org/article/7b2cc31c11a5447f89159e1ed74f8fd0
Publikováno v:
Science (New York, N.Y.). 377(6611)
Non-abelian anyons are prospective candidates for fault-tolerant topological quantum computation due to their long-range entanglement. Curiously these quasiparticles are charge-neutral, hence elusive to most conventional measurement techniques. A pro
Autor:
Bivas Dutta, Wenmin Yang, Ron Melcer, Hemanta Kumar Kundu, Moty Heiblum, Vladimir Umansky, Yuval Oreg, Ady Stern, David Mross
Publikováno v:
Science
Teasing out the topological order Quantum Hall states, which form in two-dimensional electron gases at low temperatures and in the presence of strong magnetic fields, have long been known to have nontrivial topological properties. Among the most intr
Autor:
Jukka P. Pekola, Paolo Andrea Erdman, Joonas T. Peltonen, Bibek Bhandari, Hervé Courtois, Bivas Dutta, Rosario Fazio, Fabio Taddei
Publikováno v:
Physical Review B 99 (2019). doi:10.1103/PhysRevB.99.165405
info:cnr-pdr/source/autori:Erdman P.A.; Peltonen J.T.; Bhandari B.; Dutta B.; Courtois H.; Fazio R.; Taddei F.; Pekola J.P./titolo:Nonlinear thermovoltage in a single-electron transistor/doi:10.1103%2FPhysRevB.99.165405/rivista:Physical Review B/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:99
Physical Review B
Physical Review B, American Physical Society, 2019, 99 (16), pp.165405. ⟨10.1103/PhysRevB.99.165405⟩
info:cnr-pdr/source/autori:Erdman P.A.; Peltonen J.T.; Bhandari B.; Dutta B.; Courtois H.; Fazio R.; Taddei F.; Pekola J.P./titolo:Nonlinear thermovoltage in a single-electron transistor/doi:10.1103%2FPhysRevB.99.165405/rivista:Physical Review B/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:99
Physical Review B
Physical Review B, American Physical Society, 2019, 99 (16), pp.165405. ⟨10.1103/PhysRevB.99.165405⟩
We perform direct thermovoltage measurements in a single-electron transistor, using on-chip local thermometers, both in the linear and non-linear regimes. Using a model which accounts for co-tunneling, we find excellent agreement with the experimenta
Autor:
Ron Aharon Melcer, Bivas Dutta, Christian Spånslätt, Jinhong Park, Alexander D. Mirlin, Vladimir Umansky
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Nature Communications
Nature Communications, 13 (1), Artk.Nr.: 376
Nature Communications
Nature Communications, 13 (1), Artk.Nr.: 376
Two-dimensional topological insulators, and in particular quantum Hall states, are characterized by an insulating bulk and a conducting edge. Fractional states may host both downstream (dictated by the magnetic field) and upstream propagating edge mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::529d955bff256c3607d76d177c1f787e
Publikováno v:
Physical Review Letters
Physical Review Letters, American Physical Society, 2020, 125 (23), pp.237701. ⟨10.1103/PhysRevLett.125.237701⟩
Physical Review Letters, American Physical Society, 2020, 125 (23), pp.237701. ⟨10.1103/PhysRevLett.125.237701⟩
We demonstrate gate control of electronic heat flow in a thermally-biased single-quantum-dot junction. Electron temperature maps taken in the immediate vicinity of the junction, as a function of the gate and bias voltages applied to the device, revea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54c3e4d1dd984520dbb28dcdde48a910
http://arxiv.org/abs/2001.08183
http://arxiv.org/abs/2001.08183
Autor:
Hervé Courtois, Paolo Andrea Erdman, Danial Majidi, Bivas Dutta, Clemens Winkelmann, T. A. Costi, Alvaro García Corral, Serge Florens
Publikováno v:
Nano letters 19(1), 506-511 (2019). doi:10.1021/acs.nanolett.8b04398
Nano letters
19 (2019): 506–511. doi:10.1021/acs.nanolett.8b04398
info:cnr-pdr/source/autori:Dutta B.; Majidi D.; Garcia Corral A.; Erdman P.A.; Florens S.; Costi T.A.; Courtois H.; Winkelmann C.B./titolo:Direct Probe of the Seebeck Coefficient in a Kondo-Correlated Single-Quantum-Dot Transistor/doi:10.1021%2Facs.nanolett.8b04398/rivista:Nano letters (Print)/anno:2019/pagina_da:506/pagina_a:511/intervallo_pagine:506–511/volume:19
Nano Letters
Nano Letters, American Chemical Society, 2019, 19 (1), pp.506-511. ⟨10.1021/acs.nanolett.8b04398⟩
Nano letters
19 (2019): 506–511. doi:10.1021/acs.nanolett.8b04398
info:cnr-pdr/source/autori:Dutta B.; Majidi D.; Garcia Corral A.; Erdman P.A.; Florens S.; Costi T.A.; Courtois H.; Winkelmann C.B./titolo:Direct Probe of the Seebeck Coefficient in a Kondo-Correlated Single-Quantum-Dot Transistor/doi:10.1021%2Facs.nanolett.8b04398/rivista:Nano letters (Print)/anno:2019/pagina_da:506/pagina_a:511/intervallo_pagine:506–511/volume:19
Nano Letters
Nano Letters, American Chemical Society, 2019, 19 (1), pp.506-511. ⟨10.1021/acs.nanolett.8b04398⟩
We report on the first measurement of the Seebeck coefficient in a tunnel-contacted and gate-tunable individual single-quantum dot junction in the Kondo regime, fabricated using the electromigration technique. This fundamental thermoelectric paramete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afcdf354bf893d66a5965c4eb5ed1697
https://hdl.handle.net/2128/22748
https://hdl.handle.net/2128/22748
Autor:
Clemens Winkelmann, Daniil S. Antonenko, Björn Kubala, Hervé Courtois, Bivas Dutta, Jürgen König, Matthias Meschke, Mikhail A. Skvortsov, Joonas T. Peltonen, Jukka P. Pekola
Publikováno v:
Physical Review Letters
Physical Review Letters, American Physical Society, 2017, 119 (7), pp.077701. ⟨10.1103/PhysRevLett.119.077701⟩
Physical Review Letters, American Physical Society, 2017, 119 (7), pp.077701. ⟨10.1103/PhysRevLett.119.077701⟩
We report on combined measurements of heat and charge transport through a single-electron transistor. The device acts as a heat switch actuated by the voltage applied on the gate. The Wiedemann-Franz law for the ratio of heat and charge conductances
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da960d25424231b2ba35984051e4fd1c