Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Biswajit Baral"'
Publikováno v:
SN Applied Sciences, Vol 5, Iss 12, Pp 1-10 (2023)
Abstract Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MO
Externí odkaz:
https://doaj.org/article/c901bdb49c4d4b85ae82a237efc79151
Linarity analysis of nanoscaled devices is a vital issue as nonlinearity behaviour is exhibited by them when employed in circuits for microwave and RF applications. In this work a junctionless surrounded gate graded channel MOSFET (JLSGGC MOSFET) is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a45457f29a50083fecf2d7ec7c119d1
https://doi.org/10.21203/rs.3.rs-2757963/v1
https://doi.org/10.21203/rs.3.rs-2757963/v1
Autor:
Zahra Ahangari, Muhammed Ahosan Ul Karim, Navjeet Bagga, Writam Banerjee, Biswajit Baral, Ratul K. Baruah, Arighna Basak, Sriyanka Behera, Sekhar Bhattacharya, D.K. Bhattacharyya, Sudhansu Mohan Biswal, Avik Chakraborty, Manash Chanda, Joy Chowdhury, Jitendra Kumar Das, Sanghamitra Das, Shyamal K. Das, Gananath Dash, Taraprasanna Dash, Papiya Debnath, Arpan Deyasi, Shashank Kumar Dubey, Md Salim Equbal, Abhigyan Ganguly, Rupam Goswami, Richa Gupta, Anisul Haque, Hadi Heidari, N. Hoque, Aminul Islam, Raisul Islam, Devika Jena, Manasa Ranjan Jena, Chinmay Kumar Maiti, Eleena Mohapatra, Kamalakanta Mohapatra, Shamma Nasrin, Satya Ranjan Pattanaik, Vivek Raghuwanshi, Hafizur Rahman, Shubham Sahay, Angsuman Sarkar, Saheli Sarkhel, Nabin Sarmah, Ashok Kumar Sharma, Preeti Sharma, Rajnish Sharma, Santosh Sharma, Avtar Singh, Shree Prakash Tiwari, Rakesh Vaid, Zheng Wang
Publikováno v:
Nanoelectronics : Physics, Materials and Devices ISBN: 9780323918329
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c199005adc0e872d1db3b11981ba1bb
https://doi.org/10.1016/b978-0-323-91832-9.00022-1
https://doi.org/10.1016/b978-0-323-91832-9.00022-1
Autor:
Sanghamitra Das, Taraprasanna Dash, Biswajit Baral, Sudhansu Mohan Biswal, Devika Jena, Eleena Mohapatra
Publikováno v:
Nanoelectronics : Physics, Materials and Devices ISBN: 9780323918329
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4332fb301dda291bcf7f21addb4b3d3
https://doi.org/10.1016/b978-0-323-91832-9.00011-7
https://doi.org/10.1016/b978-0-323-91832-9.00011-7
Publikováno v:
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce87ce68cb9ecf6082d2a39af6047680
https://doi.org/10.1109/edkcon56221.2022.10032938
https://doi.org/10.1109/edkcon56221.2022.10032938
Publikováno v:
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e40d7fb412a714ea9b9b8290b37b10a9
https://doi.org/10.1109/edkcon56221.2022.10032956
https://doi.org/10.1109/edkcon56221.2022.10032956
Autor:
Kishore Chandra Singh, Sudhansu Mohan Biswal, Biswajit Baral, Satish Kumar Das, Prasantakumar Khuntia
Publikováno v:
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29362e0d46661f4082b8e0f5384ba0e
https://doi.org/10.1109/edkcon56221.2022.10032909
https://doi.org/10.1109/edkcon56221.2022.10032909
Autor:
Biswajit Baral, Angsuman Sarkar, Sanjit Kumar Swain, Sarita Misra, Sudhansu Kumar Pati, Sudhansu Mohan Biswal
Publikováno v:
Journal of Computational Electronics. 20:480-491
As short-channel effects (SCEs) are a major issue in the nanoscale regime, investigation of the subthreshold behaviour of nanometer-scale devices is critical. Here, we have developed an analytical model for a cylindrical gate junctionless accumulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3f6348454d4b8be280cd8f110ee1a94
https://doi.org/10.1007/s10825-020-01560-z
https://doi.org/10.1007/s10825-020-01560-z
Publikováno v:
2021 19th OITS International Conference on Information Technology (OCIT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eaadc2fc63586cab6f4a69780f9c1a6
https://doi.org/10.1109/ocit53463.2021.00090
https://doi.org/10.1109/ocit53463.2021.00090
This paper explores the potential advantage of surrounded gate junctionless graded channel (SJLGC) MOSFET in the view of its Analog, RF performances using ATLAS TCAD device simulator. The impact of graded channel in the lateral direction on the poten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::628496792ab019c9c02e39be4a3e492a
https://doi.org/10.21203/rs.3.rs-621755/v1
https://doi.org/10.21203/rs.3.rs-621755/v1