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Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their memristic
Externí odkaz:
http://arxiv.org/abs/2409.09327
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes transitions
Externí odkaz:
http://arxiv.org/abs/2409.09307
Autor:
Bisquert, Juan, Tessler, Nir
For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we describe a
Externí odkaz:
http://arxiv.org/abs/2408.09507
Autor:
Bisquert, Juan, Keene, Scott T.
The transient behaviour of organic electrochemical transistors (OECT) is complex due to mixed ionic-electronic properties that play a central role in bioelectronics, sensing and neuromorphic applications. We investigate the impedance response of ion-
Externí odkaz:
http://arxiv.org/abs/2408.02648
Autor:
Balaguera, Enrique H., Bisquert, Juan
Current-voltage measurements are a standard testing protocol to determine the efficiency of any solar cell. However, perovskite solar cells display significant kinetic phenomena that modify the performance at several time scales, due to hysteresis, i
Externí odkaz:
http://arxiv.org/abs/2407.01721
Hysteresis in organic electrochemical transistors (OECT) is a basic effect in which the measured current depends on the voltage sweep direction and velocity. This phenomenon has an important impact on different aspects of the application of OECT, suc
Externí odkaz:
http://arxiv.org/abs/2404.16498
Autor:
Bisquert, Juan1,2 (AUTHOR) jbisquer@itq.upv.es, Ilyassov, Baurzhan3 (AUTHOR) baurzhan.ilyassov@astanait.edu.kz, Tessler, Nir4 (AUTHOR) nir@technion.ac.il
Publikováno v:
Advanced Science. 9/25/2024, Vol. 11 Issue 36, p1-23. 23p.
A large body of literature reports that both bismuth vanadate and haematite photoanodes are semiconductors with an extremely high doping density between 10^18-10^21 cm^-3. Such values are obtained from Mott-Schottky plots by assuming that the measure
Externí odkaz:
http://arxiv.org/abs/2201.04017
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