Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Birte-Julia Godejohann"'
Autor:
Erdin Ture, Peter Bruckner, Birte-Julia Godejohann, Rolf Aidam, Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Rudiger Quay, Oliver Ambacher
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 1-6 (2016)
Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors ar
Externí odkaz:
https://doaj.org/article/0bfbf3a76e014c1997607dcc0c39d50d
Autor:
Birte-Julia Godejohann, David Lackner, Bruno Boizot, Jeremie Lefevre, R. Lang, Jonas Schön, Frank Dimroth
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
As an answer to increased demand for more radiation tolerant solar cells for space applications, we investigate the dependence of radiation hardness of III-V compounds on composition of InGaAsP. Four solar cells with different composition were grown
Autor:
Christoph Flötgen, R. Lang, Joerg Schwar, Felix Predan, Michael Schachtner, Bruno Boizot, David Lackner, Jonas Schön, Frank Dimroth, Jereemie Lefevre, Birte-Julia Godejohann
Publikováno v:
2019 European Space Power Conference (ESPC).
Electric orbit raising increases the radiation dose for space solar arrays significantly. This leads to the need for a more radiation resistant, highly efficient space solar cell. We propose a new wafer-bonded 4-junction structure which allows reachi
Autor:
Mathias Marx, Andrei Vescan, Michael Heuken, Birte-Julia Godejohann, Simon Kotzea, Holger Kalisch, Wiebke Witte, Rolf Aidam
Publikováno v:
Electronics
Volume 8
Issue 4
Electronics : open access journal 8(4), 377 (2019). doi:10.3390/electronics8040377
Electronics, Vol 8, Iss 4, p 377 (2019)
Volume 8
Issue 4
Electronics : open access journal 8(4), 377 (2019). doi:10.3390/electronics8040377
Electronics, Vol 8, Iss 4, p 377 (2019)
Electronics 8(4), 377 - (2019). doi:10.3390/electronics8040377
Published by MDPI, Basel
Published by MDPI, Basel
Autor:
T. Lim, Ruediger Quay, Birte-Julia Godejohann, Lutz Kirste, Patrick Waltereit, Elke Diwo, Rolf Aidam, Oliver Ambacher
Publikováno v:
Molecular Beam Epitaxy ISBN: 9781119354987
Molecular Beam Epitaxy
Molecular Beam Epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ee424bad3c36b0d307e3ba72fb4e51a
https://doi.org/10.1002/9781119354987.ch7
https://doi.org/10.1002/9781119354987.ch7
Autor:
Oliver Ambacher, Peter Brückner, Ralf Granzner, Mohamed Alsharef, Birte-Julia Godejohann, Rudiger Quay, Rolf Aidam, Erdin Ture, Frank Schwierz
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 1-6 (2016)
Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors ar
Publikováno v:
2018 22nd International Microwave and Radar Conference (MIKON).
This paper presents recent device and MMIC results of a 70 nm AlN/GaN-HEMT technology. Based on DC-transfer characteristics, a high saturated drain current of more than 1700 mA/mm, and a maximum transconductance of 470 mS/mm were measured for this te
Publikováno v:
physica status solidi (a). 211:2854-2860
Heterostructures with lattice matched Al(Ga)InN barriers have been widely investigated as alternative to standard AlGaN/GaN based high electron mobility transistor structures for high power applications. Mostly these heterostructures comprise a thin
Broadband E-Band Power Amplifier MMIC Based on an AlGaN/GaN HEMT Technology with 30 dBm Output Power
Autor:
Steffen Breuer, Rudiger Quay, Birte-Julia Godejohann, Michael Mikulla, Oliver Ambacher, Peter Brückner, Dirk Schwantuschke
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This paper reports on the design of a power amplifier covering the entire E-band satellite communication bands (71-76 GHz & 81-86 GHz) and demonstrating a high saturated output power of more than 1 W across this frequency range of interest. The circu
Autor:
Erdin Ture, Oliver Ambacher, Steffen Breuer, Mario Prescher, Lutz Kirste, Vladimir Polyakov, Stefan Müller, Birte-Julia Godejohann, Peter Brückner, Klaus Köhler, Rudiger Quay, Rolf Aidam
Publikováno v:
physica status solidi (b). 254:1600715