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pro vyhledávání: '"Birgitta Dipl Phys Hacker"'
Publikováno v:
Journal of the American Ceramic Society. 80:317-323
The gas sensitivity of Ga2O3 thin-film n-type conductors was investigated at temperatures of 500–1000°C. Palladium dispersions whose particle sizes are dependent on the preceding annealing processes were deposited by a wet-chemical technique onto
Publikováno v:
Scanning. 15:291-294
The topography of resistive Ga2O3 metal oxide sensing devices was examined and characterized with an atomic force microscope (AFM). The sensing devices do not have to be destroyed for characterization and stay fully functional. Deposition of nobel me
Publikováno v:
ChemInform. 28
The gas sensitivity of Ga2O3 thin-film n-type conductors was investigated at temperatures of 500–1000°C. Palladium dispersions whose particle sizes are dependent on the preceding annealing processes were deposited by a wet-chemical technique onto