Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Birgit Seiss"'
Publikováno v:
ECS Transactions. 64:207-221
Epitaxy (epi) is widely used in recent and advanced CMOS technologies for SiGe channels, SiGe stressors or raised sources/drains… and the device performances rely on the morphology and structure of these epitaxial layers. As deposition takes place
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7308524dbf23c618592f4c602b6d0b43
https://doi.org/10.1149/06406.0207ecst
https://doi.org/10.1149/06406.0207ecst
Autor:
Birgit Seiss, Didier Dutartre
Publikováno v:
ECS Transactions. 53:33-43
In this work a process was developed to passivate epitaxial SiGe on Si (001) substrates by a very thin Si layer. The Si-passivation was characterized in terms of deposition kinetics and of impact on the SiGe morphology during annealing. Different pas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::773eaccd5e9bdb499e4192a6b89e6eae
https://doi.org/10.1149/05303.0033ecst
https://doi.org/10.1149/05303.0033ecst
Autor:
Birgit Seiss, Didier Dutartre
Publikováno v:
Solid-State Electronics. 83:18-24
The morphology of Si and Si0.73Ge0.27 (SiGe), deposited in 〈1 0 0〉 and 〈1 1 0〉 oriented patterns on (0 0 1) Si wafers, has been studied after an annealing step. Thin films of 19 nm have been realized by selective epitaxy in patterns of varyin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2cc3eea474b116a466b1e32c94069de
https://doi.org/10.1016/j.sse.2013.01.034
https://doi.org/10.1016/j.sse.2013.01.034
Publikováno v:
MRS Proceedings. 1551:87-92
The influence of film thickness and line width on the morphology of epitaxial SiGe was studied after an annealing step. The morphology of 5 nm and 19 nm thick SiGe was characterized in 60-490 nm wide lines which were oriented along on Si (001) substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd92e5b689debd93ac48822cbfe708c5
https://doi.org/10.1557/opl.2013.1041
https://doi.org/10.1557/opl.2013.1041
Autor:
D. Barge, Birgit Seiss, Didier Dutartre, Denis Pellissier-Tanon, Roland Pantel, Yves Campidelli
Publikováno v:
Thin Solid Films. 520:3163-3169
Epitaxy in Si technologies has to be integrated in the flow of fabrication; in most cases, it has to be selective and deposition takes place in extremely small patterns. In a first part, Si or SiGe epitaxy faceting is presented and discussed. Today,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48f29ba806af76fda20f1dcf1e2a6ab2
https://doi.org/10.1016/j.tsf.2011.10.115
https://doi.org/10.1016/j.tsf.2011.10.115