Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Biqin Huang"'
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
Abstract In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain
Externí odkaz:
https://doaj.org/article/4162a6be0e2842a59513dbf6ab786a75
Autor:
Keyvan Sayyah, Raymond Sarkissian, Pamela Patterson, Biqin Huang, Oleg Efimov, Danny Kim, Ken Elliott, Louis Yang, David Hammon
Publikováno v:
Journal of Lightwave Technology. 40:2763-2772
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-5 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-5 (2020)
In this letter we report a diamond lateral FinFET fabricated using an ohmic regrowth technique. The use of ohmic regrowth separates the source/drain and gate fabrication, providing a viable means to improve ohmic contact resistance while protecting t
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effectiv
Autor:
Andrey A. Kiselev, Matthew Borselli, Thomas Hazard, Andrew T. Hunter, Marko Sokolich, Thaddeus D. Ladd, K.S. Holabird, Ivan Alvarado-Rodriguez, Brett M. Maune, Peter W. Deelman, Mark F. Gyure, Richard S. Ross, Biqin Huang, Adele E. Schmitz, Edward T. Croke
Publikováno v:
ECS Transactions. 50:823-829
Electrically defined silicon-based qubits are expected to show improved quantum memory characteristics in comparison with GaAs-based devices due to reduced hyperfine interactions with nuclear spins. Silicon-based qubit devices have proved more challe
Autor:
Peter W. Deelman, Christopher A. Watson, Mark F. Gyure, Thaddeus D. Ladd, Adele E. Schmitz, Biqin Huang, Richard S. Ross, Andrey A. Kiselev, Brett M. Maune, Matthew Borselli, Marko Sokolich, Andrew T. Hunter, K.S. Holabird, Ivan Alvarado-Rodriguez
Publikováno v:
Nature. 481:344-347
Exploiting the weak interactions between electron spins and nuclear spins in silicon-based quantum dots leads to a dephasing time two orders of magnitude greater than in analogous gallium-arsenide-based devices, demonstrating the potential of silicon
Autor:
Andrey A. Kiselev, Adele E. Schmitz, K.S. Holabird, Peter W. Deelman, Mark F. Gyure, Matthew Borselli, Biqin Huang, Richard S. Ross, Thomas Hazard, Marko Sokolich, Leslie D. Warren, Kevin H. Eng, Andrew T. Hunter, Ivan Milosavljevic
Publikováno v:
Nanotechnology. 26(37)
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual q
Autor:
K.S. Holabird, Kevin H. Eng, Aaron Smith, Peter W. Deelman, Mark F. Gyure, Bryan H. Fong, Ivan Milosavljevic, Andrey A. Kiselev, Thomas Hazard, Thaddeus D. Ladd, Matthew Borselli, Andrew T. Hunter, Biqin Huang, Adele E. Schmitz, Richard S. Ross
Publikováno v:
Science Advances
Three coupled quantum dots in isotopically purified silicon enable all-electrical qubit control with long coherence time.
Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control
Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control
Publikováno v:
Journal of Optics A: Pure and Applied Optics. 6:853-858
Unlike the conventional Fabry–Perot cavity, the gap length of a MEMS-based FP tunable filter is comparable with the wavelength. The phase shift on reflection from the top and bottom reflectors plays a crucial role in the determination of peak wavel
Publikováno v:
IEEE Electron Device Letters. 29:892-894
Spin-valve transistors (SVTs) employing hot-electron transport through ferromagnetic multilayers have large magnetocurrent (MC), making them a promising magnetic field sensor. However, the assembly technique required for fabricating the necessary sem