Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Binli Liu"'
Publikováno v:
Energies, Vol 15, Iss 19, p 7393 (2022)
Based on extremely uneven temperature distribution along the insulated gate bipolar transistor (IGBT) chip vertical path during switching transients, a short-duration transient microsecond-scale prediction model applicable to multi-timescale simulati
Externí odkaz:
https://doaj.org/article/5055a78dd0b24de68477c814e06a8a72
Publikováno v:
In Microelectronics Reliability June 2020 109
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:7177-7187
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789819904501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3934f5b082d2a97f0338e2999796039
https://doi.org/10.1007/978-981-99-0451-8_132
https://doi.org/10.1007/978-981-99-0451-8_132
Publikováno v:
IEEE Transactions on Industrial Electronics. 68:3033-3043
Fatigue failure of insulated gate bipolar transistor modules (IGBTs) packages under low-amplitude temperature swings is of great significance for the reliability evaluation of IGBTs operating in actual power electronic devices. In this article, failu
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 8:4173-4185
The behavior of the insulated gate bipolar transistor (IGBT) module results in the electric field, temperature field, and stress field, and there are strong coupling effects among its electrical, temperature, and mechanical characteristics. Meanwhile
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 8:3162-3173
Lifting-off of Al bonding wires is one common failure mode of insulated-gate bipolar transistor (IGBT) modules during long-time operation. In the present work, the failure mechanism of Al wires lifting-off was investigated and the major factors were
Publikováno v:
IEEE Transactions on Power Electronics. 35:5660-5669
The wide use of press-pack insulated-gate bipolar transistors (IGBTs) in high-voltage dc (HVdc) applications makes the accurate modeling of high-voltage press-pack IGBTs more urgent. Based on the mechanism of the switching transient, a physics-based
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 7:1547-1555
This paper presents a physical lumped-charge model for an SiC merged p-i-n Schottky (MPS) diode. According to the MPS chip configuration, this paper divides the model into two parts: the bipolar subcircuit and the unipolar subcircuit. Both the two pa
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 7:1593-1603
Based on the features of different timescales and according to the characteristics of loss and heat transfer under those cases, a multi-timescale prediction model (MTPM) of insulated gate bipolar transistor (IGBT) junction temperature is presented in