Výsledky vyhledávání - "Binjian Zeng"

Akademický článek

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Autor: Changfan Ju, Binjian Zeng, Ziqi Luo, Zhibin Yang, Puqi Hao, Luocheng Liao, Qijun Yang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao

Publikováno v: Journal of Materiomics, Vol 10, Iss 2, Pp 277-284 (2024)

Hf0.5Zr0.5O2 (HZO) ferroelectric thin films have gained significant attention for the development of next-generation ferroelectric memories by complementary-metal-oxide semiconductor (CMOS) back-end-of-line (BEOL) processing, due to their relatively

Externí odkaz: https://doaj.org/article/e1c66f6c46f24303af4852d15c97d7eb

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Akademický článek

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Autor: Tianqi Hao, Binjian Zeng, Zhijie Sun, Zhenguo Wang, Yongquan Jiang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao

Publikováno v: APL Materials, Vol 12, Iss 1, Pp 011108-011108-9 (2024)

HfO2-based ferroelectric field-effect transistors (FeFETs) are regarded as one of the most promising non-volatile memory technologies in the future. However, the charge trapping phenomenon during the program/erase operation is still a challenge. In t

Externí odkaz: https://doaj.org/article/0a548554e8644a16b89f35083a110269

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Akademický článek

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

Autor: Chen Liu, Binjian Zeng, Siwei Dai, Shuaizhi Zheng, Qiangxiang Peng, Jinjuan Xiang, Jianfeng Gao, Jie Zhao, Jincheng Zhang, Min Liao, Yichun Zhou

Publikováno v: Journal of Materiomics, Vol 8, Iss 3, Pp 685-692 (2022)

Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based ferroelectric thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have

Externí odkaz: https://doaj.org/article/70d25fafea354da1885421915b6db61d

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Akademický článek

Domain Wall Evolution in Hf0.5Zr0.5O2 Ferroelectrics under Field-Cycling Behavior

Autor: Sirui Zhang, Qinghua Zhang, Fanqi Meng, Ting Lin, Binjian Zeng, Lin Gu, Min Liao, Yichun Zhou

Publikováno v: Research, Vol 6 (2023)

HfO2-based ferroelectrics have evoked considerable interest owing to the complementary metal–oxide semiconductor compatibility and robust ferroelectricity down to a few unit cells. However, the unique wake-up effect of HfO2-based ferroelectric film

Externí odkaz: https://doaj.org/article/195022cde3ac4fd5b30a426e029a4398

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Akademický článek

2-Bit/Cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications

Autor: Binjian Zeng, Min Liao, Qiangxiang Peng, Wenwu Xiao, Jiajia Liao, Shuaizhi Zheng, Yichun Zhou

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 7, Pp 551-556 (2019)

The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf0.5Zr0.5O2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization st

Externí odkaz: https://doaj.org/article/9b307cb67a7f4290b260b71ec97a9c29

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