Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Binh L. Pham"'
Publikováno v:
2022 IEEE Ninth International Conference on Communications and Electronics (ICCE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddc51cd5c0f87dd00a5cbe2bd3dc8657
https://doi.org/10.1109/icce55644.2022.9852027
https://doi.org/10.1109/icce55644.2022.9852027
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:205-215
In this paper, we present the design of an ultracompact monolithic millimeter-wave integrated circuit Doherty power amplifier (DPA) using a novel reconfigurable input network at Ka -band. The proposed input network is formed by a compact broadside co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fff7459d0b7e37d2b61f729f5eba9383
https://doi.org/10.1109/tmtt.2018.2874249
https://doi.org/10.1109/tmtt.2018.2874249
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:4208-4217
We present the development of an ultra-wideband and 1-W voltage-controlled attenuator (VCA) using a 0.15- $\mu \text{m}$ enhancement mode gallium arsenide pseudomorphic high-electron mobility transistor technology. For the first time, a 2-D stacked f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8fe079bef95f9794f0636249192be66
https://doi.org/10.1109/tmtt.2017.2706692
https://doi.org/10.1109/tmtt.2017.2706692
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
In this paper, we present a compact Doherty power amplifier (DPA) in a 0.15-μm enhancement mode (E-mode) Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process at Ka-band. The 2-stage DPA uses an integrated input bro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0caa1592201daeaa2ef0565c592d330
https://doi.org/10.1109/mwsym.2017.8058964
https://doi.org/10.1109/mwsym.2017.8058964
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
In this paper, we report a wide bandwidth low noise amplifier (LNA) fabricated in a 0.15 μm enhancement mode (Emode) gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The lna employs source degeneration along w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68a21a35047fe735ec269a2f7cce8bfa
https://doi.org/10.1109/mwsym.2017.8059048
https://doi.org/10.1109/mwsym.2017.8059048
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
In this paper, a high power monolithic GaAs limiter for transmit/receive module is presented. While keeping the output power below 100 mW (20 dBm), this limiter can sustain a RF input power up to 4 Watts (36 dBm). The survival input power of this lim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b980b0b5d2a88a19e6482d8e9864769
https://doi.org/10.1109/csics.2016.7751041
https://doi.org/10.1109/csics.2016.7751041
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A stacked-FET power amplifier (PA) with harmonic- tuned output matching network is demonstrated using a 0.15-µm Gallium Arsenide (GaAs) technology. The fabricated PA exhibits 28.5 dBm output power, 12 dB gain and 38.4% power added efficiency (PAE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e37e1cec2d0d401c9e2c4d1da8f876
https://doi.org/10.1109/csics.2016.7751020
https://doi.org/10.1109/csics.2016.7751020
Publikováno v:
2016 IEEE Sixth International Conference on Communications and Electronics (ICCE).
In this paper, a monolithic variable gain low noise amplifier (VGLNA) for transmit/receive module is presented. The voltage controlled attenuator (VCA) in the VGLNA helps to control the gain of the LNA for 20 dB range. This core-chip achieves a high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d36a237cc8ecf7c2f9339dc24450e7a
https://doi.org/10.1109/cce.2016.7562640
https://doi.org/10.1109/cce.2016.7562640
Publikováno v:
IET Microwaves, Antennas & Propagation, vol 10, iss 5
Author(s): Pham, BL; Ta, HH; Pham, AV; Leoni, RE; Leviatan, Y | Abstract: In this study, the authors present the design and development of a novel ultra-wideband coupled-line balun on a multilayer liquid crystal polymer substrate. The balun is design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c07a0ced6ab9bf96580ad85ec61d000
https://escholarship.org/uc/item/8tp073cg
https://escholarship.org/uc/item/8tp073cg
Publikováno v:
2015 IEEE MTT-S International Microwave Symposium.
We present the design and fabrication of an ultra-wide bandwidth balun on a multilayer organic Liquid Crystal Polymer substrate. Using a novel U-shaped defected ground structure and a single inductor, the balun achieves a measured insertion loss of l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60dd5332afdc8b440316d90880c58b85
https://doi.org/10.1109/mwsym.2015.7166899
https://doi.org/10.1109/mwsym.2015.7166899