Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Binglei Fu"'
Autor:
Luna, Jinmin Li, Junxi Wang, Ian T. Ferguson, Xiaoyan Yi, Binglei Fu, Guodong Yuan, Zhiqiang Liu
Publikováno v:
RSC Advances. 6:5111-5115
In this work, an effective strategy for achieving efficient p-type doping in wide bandgap nitride semiconductors was proposed to overcome the fundamental issue of high activation energy. We demonstrated that a hole concentration as high as 1.4 × 101
Autor:
Xiaoyan Yi, Hongxi Lu, Zhao Si, Binglei Fu, Zhiqiang Liu, Yan Cheng, Junxi Wang, Tongbo Wei, Guodong Yuan, Jinmin Li, Xionghui Zeng
Publikováno v:
RSC Advances. 5:100646-100650
We reported the combination of micro-pyramid active layers and graphene electrode to realize the phosphor-free InGaN based white light emitting diodes (LEDs). SEM and TEM measurements were used to characterize the structural qualities of the micro py
Autor:
Xiaoyan Yi, Jinmin Li, Hongxi Lu, Naixin Liu, Ning Zhang, Tongbo Wei, Binglei Fu, Xiaodong Wang, Xuecheng Wei, Zhe Liu, Junxi Wang, Zhao Si
Publikováno v:
Journal of Electronic Materials. 43:1244-1248
In this work, the effects of growth pressure and growth rate on electrical and structural properties of Mg-doped GaN were investigated. It has been shown that enhanced growth rates induced by higher growth pressures may lead to decreased structural a
Autor:
Jinmin Li, Yong Zhang, Xiaoyan Yi, Yang Huang, Guodong Yuan, Junxi Wang, Binglei Fu, Zhiqiang Liu
Publikováno v:
Scientific Reports
A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenologi
Autor:
Shaoxin Zhu, Jun Ma, Hongxi Lu, Zhao Si, Xuecheng Wei, Zhe Liu, Junxi Wang, Binglei Fu, Tongbo Wei, Jinmin Li, Jianchang Yan
Publikováno v:
ECS Solid State Letters. 2:R37-R39
A study about the effect of Mg doping in specified quantum-barrier on dual wavelength light emitting diodes (LEDs) was performed. A series of dual wavelength LEDs with different Mg doping conditions and barrier thickness were fabricated. According to
Autor:
Gang Han, Lixia Zhao, Jinmin Li, Binglei Fu, Zhe Liu, Ning Zhang, Xue Bin, Ren Peng, Junxi Wang
Publikováno v:
Chinese Physics Letters. 33:068101
GaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen (H2)/nitrogen (N2) and growth temperature of the selective area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). The SAG template is obtain
Autor:
Xiaoyan Yi, Hongxi Lu, Binglei Fu, Zhe Liu, Zhiqiang Liu, Tongbo Wei, Zhuo Xiong, Junxi Wang, Junjie Kang, Jinmin Li, Naixin Liu, Xuecheng Wei, Zhi Li
Publikováno v:
Optics Express. 22:A1284
We reported that the peak efficiency together with the efficiency droop in InGaN-based light emitting diodes could be effectively modified through a simple and low-cost etch-regrown process in n-GaN layer. The etched n-GaN template contained pyramid
Autor:
Ping Ma, Junxi Wang, Naixin Liu, Binglei Fu, Zhao Si, Tongbo Wei, Jinmin Li, Zhe Liu, Zhi Li, Xuecheng Wei, Baojuan Sun
Publikováno v:
Japanese Journal of Applied Physics. 53:060301
The effect of In codoping effect in GaN:Mg layers were investigated through strain analysis. A hydrostatic lattice expansion is induced by In doping which cannot be simply explained by the size effect of In and Mg dopants. Together with the photolumi
Autor:
Binglei Fu, Xiangxu Feng, Zhao Si, Zhe Liu, Zhiqiang Liu, Naixin Liu, Xuecheng Wei, Hongxi Lu, Jinmin Li, Junxi Wang
Publikováno v:
Journal of Display Technology; Jan2015, Vol. 11 Issue 1, p60-64, 5p
Autor:
Binglei Fu, Zhe Liu, Naixin Liu, Zhi Li, Zhao Si, Xuecheng Wei, Baojuan Sun, Ping Ma, Tongbo Wei, Jinmin Li, Junxi Wang
Publikováno v:
Japanese Journal of Applied Physics; Jun2014, Vol. 53 Issue 6, p1-1, 1p