Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Bingjin Chen"'
Autor:
Jing Zhou, Lisen Huang, Sherry Lee Koon Yap, Dennis Jing Xiong Lin, Bingjin Chen, Shaohai Chen, Seng Kai Wong, Jinjun Qiu, James Lourembam, Anjan Soumyanarayanan, Sze Ter Lim
Publikováno v:
APL Materials, Vol 12, Iss 8, Pp 081105-081105-9 (2024)
Current-induced spin–orbit torque (SOT) facilitates the ultrafast electrical manipulation of magnetic tunnel junction (MTJ), which is a leading non-volatile technology for the microelectronic industry. The key bottleneck to the commercial applicati
Externí odkaz:
https://doaj.org/article/47d9f38c27a84af1a11324cadfaa7ee0
Publikováno v:
ICCCN
Logs are one of the most valuable data sources for large-scale service management. Log representation, which converts unstructured texts to structured vectors or matrices, serves as the the first step towards automated log analysis. However, the curr
Leveraging on interfacial Dzyaloshinskii-Moriya interaction (DMI) induced intrinsic magnetization tilting in nanostructures, a parametric window enabling field-free spin-orbit torque (SOT) magnetization switching in a perpendicular ferromagnet is est
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a1224df3efb733d7b31fc5563219b44
Publikováno v:
Journal of genetics. 97(5)
Gestational diabetes mellitus (GDM) represents a common carbohydrate metabolism disorder during pregnancy. The objective of this study was to evaluate the expression levels of mitofusin 2 (MFN2) expression in placentae of GDM patients compared to tha
Publikováno v:
Journal of Applied Physics. 129:163901
We report micromagnetic simulations of spin–orbit torque (SOT) induced magnetization switching of a ferromagnetic layer with perpendicular anisotropy in the absence of an external magnetic field. Field-free switching is achieved by antiferromagneti
Autor:
Qi Jia Yap, Seng Kai Wong, Sherry Lee Koon Yap, Bingjin Chen, Lisen Huang, Hong Jing Chung, Jinjun Qiu, Sze Ter Lim, James Lourembam
Publikováno v:
Advanced Electronic Materials. 7:2001133
Autor:
Bingjin Chen, Guchang Han
Publikováno v:
IEEE Transactions on Magnetics. 52:1-6
We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change t
Publikováno v:
Journal of Applied Physics. 127:153904
Understanding the magnetization switching dynamics induced by the spin–orbit torque (SOT) in a ferromagnetic layer is crucial to the design of the ultrafast and energy-saving spin–orbit torque magnetic random access memory. Here, we investigate t
Publikováno v:
IEEE Transactions on Magnetics. 51:1-7
Electric field (EF)-assisted magnetization reversal is investigated in both top-pinned and bottom-pinned CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). EF modulation in coercivity ( $H_{c}$ ) shows an increasing dependence with the thickness of th
Autor:
Bingjin Chen, Guchang Han
Publikováno v:
IEEE Magnetics Letters. 6:1-4
We investigate the switching of electric-field (EF)-controlled magnetic tunneling junction free layer (FL) magnetization assisted by Oersted fields using micromagnetic simulations. The effects of several physical parameters, such as damping constant,