Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Bingjie Dang"'
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 8, Pp n/a-n/a (2023)
Conventional vision systems suffer from lots of data handling between memory and processing units. Inspired by how humans recognize noisy images and the flexible modulation on the timescale of ion dynamics inside an emerging memtransistor, a novel ne
Externí odkaz:
https://doaj.org/article/9e2d8979ad174c618125d83ba41c9f65
Autor:
Liying Xu, Jiadi Zhu, Bing Chen, Zhen Yang, Keqin Liu, Bingjie Dang, Teng Zhang, Yuchao Yang, Ru Huang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
Designing an efficient multi-agent hardware system to solve large-scale computational problems through high-parallelism processing with nonlinear interactions remains a challenge. Here, the authors demonstrate that a multi-agent hardware system deplo
Externí odkaz:
https://doaj.org/article/bb677b0941194f2ab81c539b70f3c280
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 3, Pp n/a-n/a (2022)
Speech recognition involves the ability to learn the audios which are closely related to event sequence. Although speech recognition has been widely implemented in software neural networks, a hardware implementation based on energy efficient computin
Externí odkaz:
https://doaj.org/article/1b122990d9a54f3fb0abe289c1d7ac1a
Autor:
Bingjie Dang, Keqin Liu, Jiadi Zhu, Liying Xu, Teng Zhang, Caidie Cheng, Hong Wang, Yuchao Yang, Yue Hao, Ru Huang
Publikováno v:
APL Materials, Vol 7, Iss 7, Pp 071114-071114-5 (2019)
Neuromorphic architectures based on memristive neurons and synapses hold great prospect in achieving highly intelligent and efficient computing systems. Here, we show that a Schottky diode based on Cu-Ta/InGaZnO4 (IGZO)/TiN structure can exhibit thre
Externí odkaz:
https://doaj.org/article/9f77323248f5432aa27562ae28357ff6
Autor:
Xulei Wu1, Bingjie Dang2, Teng Zhang2, Xiulong Wu1 xiulong@ahu.edu, Yuchao Yang2,3,4,5 yuchaoyang@pku.edu.cn
Publikováno v:
Science Advances. 4/5/2024, Vol. 10 Issue 14, p1-9. 9p.
Autor:
Keqin Liu, Teng Zhang, Bingjie Dang, Lin Bao, Liying Xu, Caidie Cheng, Zhen Yang, Ru Huang, Yuchao Yang
Publikováno v:
Nature Electronics. 5:761-773
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7b6a56d75313f12e256be67f97f8c9b
https://doi.org/10.1038/s41928-022-00847-2
https://doi.org/10.1038/s41928-022-00847-2
Autor:
Bingjie Dang, Ling Lv, Hong Wang, Lei Cai, Bonan Yan, Keqin Liu, Liying Xu, Yue Hao, Ru Huang, Yuchao Yang
Publikováno v:
IEEE Electron Device Letters. 43:1223-1226
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53fe81f1f2e1efd923c62b5b64ddd208
https://doi.org/10.1109/led.2022.3182945
https://doi.org/10.1109/led.2022.3182945
Autor:
zhen yang (Peking University), Teng zhang (Peking University), Keqin Liu (Peking University), Bingjie Dang (Peking University), Liying Xu (Peking University), Yuchao Yang (Peking University), Ru Huang (Peking University)
Conventional vision systems suffer from lots of data handling between memory and processing units. Inspired by how humans recognize noisy images and the flexible modulation on the timescale of ion dynamics inside an emerging memtransistor, we report
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1548984ea2fd6876cf157c8d5f2d6a75
https://doi.org/10.22541/au.167939089.96499861/v1
https://doi.org/10.22541/au.167939089.96499861/v1
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
The recent advances in optic neuromorphic devices have led to a subsequent rise in use for construction of energy-efficient artificial-vision systems. The widespread use can be attributed to their ability to capture, store, and process visual informa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07c46177303cda92819cb1a6433c895c
https://pubmed.ncbi.nlm.nih.gov/35917248
https://pubmed.ncbi.nlm.nih.gov/35917248
Publikováno v:
IEEE Electron Device Letters. 42:700-703
Herein, physically transient diode based on W/ZnO/MgO/W device with ultrathin MgO tunneling layer as selector for bipolar one diode-one resistor (1D1R) memory was demonstrated. By modulating thickness of MgO tunneling layer, the diode of ultrathin Mg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d523d4b906aa11c37d98478edcea4e94
https://doi.org/10.1109/led.2021.3064081
https://doi.org/10.1109/led.2021.3064081