Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Bing-Xun Wang"'
Autor:
Jian-Yang Lin, Bing-Xun Wang
Publikováno v:
Advances in Materials Science and Engineering, Vol 2014 (2014)
SiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS)
Externí odkaz:
https://doaj.org/article/2212e192dfce4fc8bbaca4f4c8e6de10
Autor:
Bing-Xun Wang, 王秉勳
101
The main purpose of this work is to investigate the resistive switching operation of HfO2-based films in the resistive random access memory (RRAM) devices. Besides, the effects of Zr-doping and electrode materials in the HfO2-based films hav
The main purpose of this work is to investigate the resistive switching operation of HfO2-based films in the resistive random access memory (RRAM) devices. Besides, the effects of Zr-doping and electrode materials in the HfO2-based films hav
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/74426757763759085012
Autor:
Bing-Xun Wang, 王秉勳
97
In this study, 0.95 (Na0.5Bi0.5)TiO3 - 0.05 BaTiO3 + 1wt% Bi2O3 (NBT-BT3) thin films were deposited on SiO2/p-Si(100) and Pt/Ti/SiO2/p-Si(100) substrates using RF magnetron sputter method and the MFIS and MFM structures would also be fabricat
In this study, 0.95 (Na0.5Bi0.5)TiO3 - 0.05 BaTiO3 + 1wt% Bi2O3 (NBT-BT3) thin films were deposited on SiO2/p-Si(100) and Pt/Ti/SiO2/p-Si(100) substrates using RF magnetron sputter method and the MFIS and MFM structures would also be fabricat
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/84039355890143113406
Autor:
Jian-Yang Lin1 linjy@yuntech.edu.tw, Bing-Xun Wang2
Publikováno v:
Advances in Materials Science & Engineering. 2014, p1-6. 6p.
Autor:
Jian Yang Lin, Bing Xun Wang
Publikováno v:
Applied Mechanics and Materials. :2543-2547
In this paper, different silicon oxide-based films and electrode materials were deposited onto the W/Si substrates by sputtering to investigate the resistive switching characteristics of the conductive-bridging RAM cells via the ion migration. A room
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db13b6a6d317c0ec95308d9ce07be4af
https://doi.org/10.4028/www.scientific.net/amm.284-287.2543
https://doi.org/10.4028/www.scientific.net/amm.284-287.2543
Autor:
Jian Yang Lin, Bing Xun Wang
Publikováno v:
Applied Mechanics and Materials. :2565-2569
In this paper, intrinsic nanocrystalline silicon thin films were deposited onto the ITO/glass substrates by PECVD and were used as the conduction material for the conductive-bridging random-access memory devices. The resistive switching characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2353c016270163d5e3b1d0f538bec733
https://doi.org/10.4028/www.scientific.net/amm.284-287.2565
https://doi.org/10.4028/www.scientific.net/amm.284-287.2565
Publikováno v:
Ferroelectrics. 385:646-653
Ferroelectric Bi4Ti3O12 thin films are deposited on Pt/Ti/Si(100) (MFM structure) and SiO2/Pt/Ti/Si (100) (MFIS) substrates using RF magnetron sputtering at room temperature. The Bi4Ti3O12 thin films are then annealed by a rapid thermal annealing (RT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b97fe92ad909b5bff1252371b3236c7
https://doi.org/10.1080/00150190902888632
https://doi.org/10.1080/00150190902888632
Publikováno v:
Ferroelectrics; 2009, Vol. 385 Issue 1, p46-53, 8p, 1 Black and White Photograph, 2 Diagrams, 5 Graphs