Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Bing-Hui Yan"'
Publikováno v:
Journal of Biomolecular Structure and Dynamics. :1-19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83f8c4e6db4e031aca3fa03178f7cd81
https://doi.org/10.1080/07391102.2023.2203237
https://doi.org/10.1080/07391102.2023.2203237
Publikováno v:
IEEE Transactions on Electron Devices. 58:3230-3235
An analytical expression of the surface potential for polysilicon thin-film transistors (poly-Si TFTs) working in the subthreshold region is obtained, following a quasi-2-D Poisson's equation, and then, an analytical subthreshold current model is sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6731d36e9fe1fde849f9a1b47bbf71
https://doi.org/10.1109/ted.2011.2159118
https://doi.org/10.1109/ted.2011.2159118
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
In this paper, a model of the effective mobility for the on-current of p-Si TFT is proposed, taking into account the gain size, the drain bias, the imperfection crystal scattering mechanism, and the surface-roughness scattering mechanism. It is found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::170c603bac7f6b1445a240023daeb52e
https://doi.org/10.1109/icsict.2008.4734528
https://doi.org/10.1109/icsict.2008.4734528
Publikováno v:
Japanese Journal of Applied Physics. 50:094302
A physics-based effective mobility model for polycrystalline silicon (poly-Si) thin film transistor (TFT) is developed by considering the discontinuous energy band between grain and grain boundary and Gaussian energy distribution at grain boundary. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ea51a2558434f7609567a28bc3c45ac
https://doi.org/10.1143/jjap.50.094302
https://doi.org/10.1143/jjap.50.094302
Publikováno v:
2008 9th International Conference on Solid-State & Integrated-Circuit Technology; 2008, p321-324, 4p
Publikováno v:
IEEE Transactions on Electron Devices; Sep2011, Vol. 58 Issue 9, p3230-3235, 6p
Publikováno v:
Japanese Journal of Applied Physics; Sep2011, Vol. 50 Issue 9R, p1-1, 1p