Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Bing-Chu Cai"'
Publikováno v:
Microelectronics Reliability. 44:1233-1243
In this paper, some practical considerations for effective and efficient wafer-level reliability control (WLRC) are presented. We propose a better solution to replace the previous method by adding a protection diode to avoid process induced charging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f5757dc2ffb9dc4f40ec78bab4c9a7
https://doi.org/10.1016/j.microrel.2004.04.009
https://doi.org/10.1016/j.microrel.2004.04.009
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 52:1458-1467
Wafer-level reliability (WLR) testing receives much attention and becomes a major tool for process reliability qualification and in-line monitoring because WLR can provide real-time results for timely improvements. This in-situ test capability is gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381db831ee4d7e8cce52cd73f024faee
https://doi.org/10.1109/tim.2003.818543
https://doi.org/10.1109/tim.2003.818543
Publikováno v:
Microelectronics Reliability. 43:713-724
This paper depicts the improvement of poly-silicon (poly-Si) holes induced failures during gate oxide integrity (GOI) voltage-ramp (V-Ramp) tests by replacing plasma enhanced oxidation with silicon rich oxidation (SRO), which is cap oxide on transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::197624b6f8448603a3c8fd234c9a10a7
https://doi.org/10.1016/s0026-2714(03)00059-3
https://doi.org/10.1016/s0026-2714(03)00059-3
Publikováno v:
Journal of the Magnetics Society of Japan. 18:S1_389-391
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ed5afb0a86fceb074c3b2c2c3adcae8
https://doi.org/10.3379/jmsjmag.18.s1_389
https://doi.org/10.3379/jmsjmag.18.s1_389
Publikováno v:
IEEE Transactions on Instrumentation & Measurement; Oct2003, Vol. 52 Issue 5, p1458-1467, 10p
Publikováno v:
Journal of Materials Research; Apr2003, Vol. 18 Issue 4, p868, 4p, 2 Diagrams, 4 Graphs
Publikováno v:
2001 6th International Conference on Solid-State & Integrated Circuit Technology. Proceedings (Cat. No.01EX443); 2001, p749-749, 1p
Publikováno v:
Chinese Physics Letters; Mar2006, Vol. 23 Issue 3, p1-1, 1p
Publikováno v:
Chinese Physics; Feb2006, Vol. 15 Issue 2, p1-1, 1p