Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Bing-Cheng Lin"'
Autor:
Yen-Chih Chiang, Bing-Cheng Lin, Kuo-Ju Chen, Sheng-Huan Chiu, Chien-Chung Lin, Po-Tsung Lee, Min-Hsiung Shih, Hao-Chung Kuo
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light
Externí odkaz:
https://doaj.org/article/c02a57a39ee04cd8ab2ca79f004719ba
Autor:
Bing-Cheng Lin, 林炳成
99
Solar energy is a distinguished renewable source of energy. Among all kinds of solar cells, the III-V semiconductor materials have numerous advantages, including direct energy bandgap, high absorption coefficient, high radiation resistance, a
Solar energy is a distinguished renewable source of energy. Among all kinds of solar cells, the III-V semiconductor materials have numerous advantages, including direct energy bandgap, high absorption coefficient, high radiation resistance, a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/36502563381880177703
Autor:
Bing-Cheng Lin, 林秉澄
96
In this thesis, we propose two Grayscale image authentication methods based on discrete Wavelet transform (DWT). In the first method, we make use of property of the low frequency DWT coefficients. The selected coefficients are processed by us
In this thesis, we propose two Grayscale image authentication methods based on discrete Wavelet transform (DWT). In the first method, we make use of property of the low frequency DWT coefficients. The selected coefficients are processed by us
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/41324802965818451282
Publikováno v:
IEEE Journal of Quantum Electronics. 52:1-6
The optical performance and relevant physical properties of near-ultraviolet (NUV) GaN-based light-emitting diodes (LEDs) are investigated. Specifically, the influence of traditional AlGaN bulk electron blocking layer (EBL) and AlGaN/GaN superlattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dae192914bc86bed7bc3b48b759ed61
https://doi.org/10.1109/jqe.2016.2587100
https://doi.org/10.1109/jqe.2016.2587100
Publikováno v:
Superlattices and Microstructures. 93:221-225
The effect of polarization-matched AlInGaN/AlGaN superlattice (SL) electron blocking layer (EBL) on the physical characteristics of blue InGaN light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the optical performa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea63a8be6a0b1d76873cb82dff7bbad3
https://doi.org/10.1016/j.spmi.2015.11.024
https://doi.org/10.1016/j.spmi.2015.11.024
Publikováno v:
IEEE Photonics Technology Letters. 27:1457-1460
In this letter, an innovative fabrication method for InGaN-based light-emitting diode (LED) was proposed, and the produced optical device was called the wafer-level InGaN-based thin-film flip-chip LEDs (wTFFC-LEDs). Packaging technologies, such as wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4d35a800e717771ca67e2d54a5cf927
https://doi.org/10.1109/lpt.2015.2425896
https://doi.org/10.1109/lpt.2015.2425896
Autor:
Wu Yih Uen, Bing-Cheng Lin, Po-Min Tu, Chi-Wei Chiu, Y. W. Lin, Ming Ta Tsai, Earl Hsu, Hao-Chung Kuo, Wei-I Lee, S. C. Huang, Zhengdong Li
Publikováno v:
Journal of Crystal Growth. 414:258-262
In this work, the ultraviolet light-emitting diodes (UV-LEDs) at 380 nm were grown on patterned sapphire substrate (PSS) by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A sputtered AlN nucleation layer was utilized on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4486b4e7d4c35cf47c20a74b55755461
https://doi.org/10.1016/j.jcrysgro.2014.10.013
https://doi.org/10.1016/j.jcrysgro.2014.10.013
Autor:
Po-Min Tu, Ching Hsueh Chiu, Ray-Hua Horng, Chun-Yen Chang, Gou Chung Chi, Chia-Yu Lee, Da-Wei Lin, Wu-Yih Uen, Kun-Ching Shen, Zhen-Yu Li, Hao-Chung Kuo, Bing-Cheng Lin
Publikováno v:
IEEE Journal of Quantum Electronics. 50:354-363
In this paper, a composite buffer layer structure (CBLS) with multiple AlGaN layers and grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN quaternary superlattices electron-blocking layers (QSLs-EBLs) are introduced int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecb2f905524dcbe3917ce9fa70a173b4
https://doi.org/10.1109/jqe.2014.2304460
https://doi.org/10.1109/jqe.2014.2304460
Autor:
Yu-Pin Lan, Ching Hsueh Chiu, Hau-Vei Han, Min-Hsiung Shih, Kuo-Ju Chen, Chien-Chung Lin, Bing-Cheng Lin, Po-Tsung Lee, Hao-Chung Kuo
Publikováno v:
IEEE Photonics Technology Letters. 25:2062-2065
InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a grade
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21b32354754130b532e11ed764c1b0c5
https://doi.org/10.1109/lpt.2013.2281068
https://doi.org/10.1109/lpt.2013.2281068
Publikováno v:
Medical Journal of Chinese People's Liberation Army, Vol 38, Iss 6, Pp 476-480 (2013)
Objective To investigate the effects of insulin-like growth factor-1 (IGF-1) and basic fibroblast growth factor (bFGF) on the proliferation of chondrocytes in a 3-dimensional (3D) culture environment of microfluidic chip. Method Rabbit articular chon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::9ede6038440c5b65c750762299371cd6
http://www.plamj.org/index.php/plamj/article/view/725
http://www.plamj.org/index.php/plamj/article/view/725