Zobrazeno 1 - 10
of 197
pro vyhledávání: '"Bing Zong Li"'
Publikováno v:
World Journal of Clinical Cases. 10:13028-13037
Autor:
Ping-Ping, Zhang, Jia-Jia, Li, Zhong-Li, Hu, Jun-Feng, Zhu, Meng, Wang, Feng, Zhang, Bing-Zong, Li
Publikováno v:
Zhongguo shi yan xue ye xue za zhi. 30(6)
To explore the expression of CD28 in multiple myeloma and its correlation with tumor burden and clinical prognosis.Flow cytometry was adopted to analyze bone marrow specimens of 91 newly diagnosed patients with multiple myeloma. According to CD28 exp
Publikováno v:
Zhongguo shi yan xue ye xue za zhi. 27(2)
To evaluated the effect of curcumin on the bortezomib-resistant myeloma cells and the expression of Notch1 signaling pathway, in order to further explore its potential mechanism.Curcumin, bortezomib, and curcumin combined bortezomib were added into R
Autor:
Jiexin Zhang, Xingding Zhang, Dixie Lee Esseltine, Bart Barlogie, Lin Yang, Enrico Milan, Antje Hoering, Zhiqiang Wang, Heather Lin, John Crowley, Wen Cai Ma, Lin Qi, Simone Cenci, Hua Wang, Bin Li, Veerabhadran Baladandayuthapani, Donna M. Weber, Sheeba K. Thomas, Jianliang Xu, Jin He, Jing Yang, Qing Zhang, Hui Han Wang, Jinle Tang, Jatin J. Shah, Bing Zong Li, Robert Z. Orlowski, Elisabet E. Manasanch, Walter Hunziker, Isere Kuiatse, Richard E. Davis, Saad Z. Usmani, George Mulligan
Publikováno v:
Cancer Cell. 29:639-652
Proteasome inhibitors have revolutionized outcomes in multiple myeloma, but they are used empirically, and primary and secondary resistance are emerging problems. We have identified TJP1 as a determinant of plasma cell proteasome inhibitor susceptibi
Publikováno v:
IEEE Transactions on Electron Devices. 63:751-754
The significant thermal stability improvement induced by laser annealing (LA) is demonstrated for 50-A Ni(Pt) film silicidation. For the first time, it is revealed that LA may induce less stress in ultrathin Ni(Pt)Si film during silicidation, which c
Publikováno v:
IEEE Electron Device Letters. 36:597-599
The TiSi x /n-Si(100) Schottky power diode is fabricated by Ti silicidation, and the Schottky barrier height (SBH) is found to be $\sim 0.69$ eV. For the first time, it is demonstrated that an 80 meV SBH reduction can be achieved by a TiN capping lay
Publikováno v:
Applied Surface Science. 257:10571-10575
Nickel silicide formation on Si(1 1 0) and Si(1 0 0) substrate was investigated in this paper. It is confirmed that nickel monosilicide (NiSi) starts to form after 450 °C annealing for Si(1 0 0) substrate, but a higher annealing temperature is requi
Autor:
Qi Xie, Bing-Zong Li, Xin-Ping Qu, Xiao-Rong Wang, Guo-Ping Ru, Christophe Detavernier, Yu-Long Jiang
Publikováno v:
Microelectronic Engineering. 88:573-577
In this work, the thermal annealing effect on the metal gate effective work function (EWF) modulation for the Al/TiN/SiO"2/p-Si(100) structure was investigated. Compared with the sample of TiN/SiO"2/p-Si(100) structure, for the sample additionally ca
Publikováno v:
IEEE Electron Device Letters. 35:780-782
The influence of post-annealing (PA) on the resistivity of 55-nm VO x film (~1.2 Ω · cm) is investigated in this letter. For the first time, it is demonstrated that PA can effectively lower the film resistivity but with a constant temperature coeff
Autor:
Bing-Zong Li, Yu-Long Jiang
Publikováno v:
ECS Transactions. 27:759-765
As the device geometry dramatically shrinks, the silicice/Si contact resistance on source/drain regions is dominating the parasitic resistance and degrading the device characteristics. To lower the contact resistance one of the effective methods is t