Zobrazeno 1 - 10
of 257
pro vyhledávání: '"Bing Yue Tsui"'
Autor:
Po-Chih Chen, Wen-Chien Miao, Tanveer Ahmed, Yi-Yu Pan, Chun-Liang Lin, Shih-Chen Chen, Hao-Chung Kuo, Bing-Yue Tsui, Der-Hsien Lien
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-17 (2022)
Abstract With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the perform
Externí odkaz:
https://doaj.org/article/a5a71dff56c440c9b3b5e4df2900a4d5
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 2, Pp 130-137 (2020)
The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage ope
Externí odkaz:
https://doaj.org/article/6b783c98f90e4882a39c54f221a86dd1
Autor:
Li Jung Lin, Bing Yue Tsui
Publikováno v:
Materials Science Forum. 1090:107-111
The effect of post-ion implantation annealing on the properties of the SiO2/4H-SiC interface is examined in this paper. It is observed that the surface roughness degrades after the high-temperature Ar annealing, but the oxidation process after the hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e605168135abe672851deaa7f74a8216
https://doi.org/10.4028/p-se77bl
https://doi.org/10.4028/p-se77bl
Publikováno v:
IEEE Transactions on Electron Devices. 69:5742-5748
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8e55892153deb878656907d10f3f951
https://doi.org/10.1109/ted.2022.3200936
https://doi.org/10.1109/ted.2022.3200936
Autor:
Chia-Lung Hung, Bing-Yue Tsui
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88819bd1ec704e4c8deada6bcee5f232
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134380
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134380
Publikováno v:
2023 35th International Conference on Microelectronic Test Structure (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e19ece20b0bf2180ea4672b96549803
https://doi.org/10.1109/icmts55420.2023.10094097
https://doi.org/10.1109/icmts55420.2023.10094097
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07df3155df8aea89716f1085bcd3ad0c
https://doi.org/10.1109/irps48203.2023.10118299
https://doi.org/10.1109/irps48203.2023.10118299
Publikováno v:
Sensors, Vol 20, Iss 2, p 436 (2020)
Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probabil
Externí odkaz:
https://doaj.org/article/8135590d939142c4bc263f57feb4aaf1
Publikováno v:
IEEE Transactions on Electron Devices. 68:6644-6647
The oxidation rate of SiC can be greatly enhanced by pre-amorphization ion-implantation (PAI), and the PAI process has been employed to form the LOCal Oxidation of SiC (LOCOSiC) structure for device isolation in SiC integrated circuits (ICs). This wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22d850b672245f8792431b402ff70a70
https://doi.org/10.1109/ted.2021.3120707
https://doi.org/10.1109/ted.2021.3120707
Autor:
Kung-Yen Lee, Wei-Chen Chen, Bing-Yue Tsui, Jia-Wei Hu, Jheng-Yi Jiang, Tian-Li Wu, Chih-Fang Huang
Publikováno v:
IEEE Transactions on Electron Devices. 68:5009-5013
This work demonstrates a trench isolated lateral double-implanted MOSFET (LDMOS) on Si-face in 4H-silicon carbide (SiC). A device $\vphantom {_{\int _{}}}$ where ${L}_{\textit {ch}} = 0.8\,\,\mu \text{m}$ and ${L}_{d} = 12\,\,\mu \text{m}$ shows an $
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::644cfe45678af588f315d93e76c7fe71
https://doi.org/10.1109/ted.2021.3101184
https://doi.org/10.1109/ted.2021.3101184