Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Bing Cheng Lin"'
Autor:
Yen-Chih Chiang, Bing-Cheng Lin, Kuo-Ju Chen, Sheng-Huan Chiu, Chien-Chung Lin, Po-Tsung Lee, Min-Hsiung Shih, Hao-Chung Kuo
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light
Externí odkaz:
https://doaj.org/article/c02a57a39ee04cd8ab2ca79f004719ba
Publikováno v:
IEEE Journal of Quantum Electronics. 52:1-6
The optical performance and relevant physical properties of near-ultraviolet (NUV) GaN-based light-emitting diodes (LEDs) are investigated. Specifically, the influence of traditional AlGaN bulk electron blocking layer (EBL) and AlGaN/GaN superlattice
Publikováno v:
Superlattices and Microstructures. 93:221-225
The effect of polarization-matched AlInGaN/AlGaN superlattice (SL) electron blocking layer (EBL) on the physical characteristics of blue InGaN light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the optical performa
Publikováno v:
IEEE Photonics Technology Letters. 27:1457-1460
In this letter, an innovative fabrication method for InGaN-based light-emitting diode (LED) was proposed, and the produced optical device was called the wafer-level InGaN-based thin-film flip-chip LEDs (wTFFC-LEDs). Packaging technologies, such as wa
Autor:
Wu Yih Uen, Bing-Cheng Lin, Po-Min Tu, Chi-Wei Chiu, Y. W. Lin, Ming Ta Tsai, Earl Hsu, Hao-Chung Kuo, Wei-I Lee, S. C. Huang, Zhengdong Li
Publikováno v:
Journal of Crystal Growth. 414:258-262
In this work, the ultraviolet light-emitting diodes (UV-LEDs) at 380 nm were grown on patterned sapphire substrate (PSS) by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A sputtered AlN nucleation layer was utilized on the
Autor:
Po-Min Tu, Ching Hsueh Chiu, Ray-Hua Horng, Chun-Yen Chang, Gou Chung Chi, Chia-Yu Lee, Da-Wei Lin, Wu-Yih Uen, Kun-Ching Shen, Zhen-Yu Li, Hao-Chung Kuo, Bing-Cheng Lin
Publikováno v:
IEEE Journal of Quantum Electronics. 50:354-363
In this paper, a composite buffer layer structure (CBLS) with multiple AlGaN layers and grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN quaternary superlattices electron-blocking layers (QSLs-EBLs) are introduced int
Autor:
Yu-Pin Lan, Ching Hsueh Chiu, Hau-Vei Han, Min-Hsiung Shih, Kuo-Ju Chen, Chien-Chung Lin, Bing-Cheng Lin, Po-Tsung Lee, Hao-Chung Kuo
Publikováno v:
IEEE Photonics Technology Letters. 25:2062-2065
InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a grade
Publikováno v:
Medical Journal of Chinese People's Liberation Army, Vol 38, Iss 6, Pp 476-480 (2013)
Objective To investigate the effects of insulin-like growth factor-1 (IGF-1) and basic fibroblast growth factor (bFGF) on the proliferation of chondrocytes in a 3-dimensional (3D) culture environment of microfluidic chip. Method Rabbit articular chon
Publikováno v:
TrAC Trends in Analytical Chemistry. 26:980-992
Systematic understanding of dynamic biological networks is grounded at the molecular level. Knowledge at this level will discover the functions of molecular components and their interactions with cells or among the molecules themselves. Single-molecu
Publikováno v:
2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
We presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer (SL-EBL). The light output power shows a 57% enhancement and only 30% efficiency droop, which i