Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Bing‐Shiun Tsai"'
Autor:
Bing-Shiun Tsai, 蔡秉勳
106
Our previous work found that graphene enables radical species to be trapped and their on-surface chemistry to be revealed. DTBP, TBA and TBN were utilized as the precursors for generating tert-butoxy radicals in conjunction with 365 nm UV li
Our previous work found that graphene enables radical species to be trapped and their on-surface chemistry to be revealed. DTBP, TBA and TBN were utilized as the precursors for generating tert-butoxy radicals in conjunction with 365 nm UV li
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/pap5g8
Autor:
Bing-Shiun Tsai, 蔡秉勳
101
In this thesis, a novel high step-up boost converter with non-isolator type is proposed. This circuit topology of the proposed converter is composed of three conventional converters: boost, sepic and forward converters with cascade connect s
In this thesis, a novel high step-up boost converter with non-isolator type is proposed. This circuit topology of the proposed converter is composed of three conventional converters: boost, sepic and forward converters with cascade connect s
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/68121523645256319175
Autor:
Yu-Che Lin, Chung-Hao Chen, Heng Lin, Meng-Hua Li, Bin Chang, Ting-Fang Hsueh, Bing -Shiun Tsai, Yang Yang, Kung-Hwa Wei
Publikováno v:
Journal of Materials Chemistry A. 10:23037-23046
Binary acceptor alloys based on two A′′–D′A′D′–A′′ small molecule acceptors having the same core but different end groups provided OPV with high PCE, Voc and stability.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edfb30ce30fa03fde157f75016a12a67
https://doi.org/10.1039/d2ta04800k
https://doi.org/10.1039/d2ta04800k
Autor:
Yu-Che Lin, Nian-Zu She, Chung-Hao Chen, Atsushi Yabushita, Heng Lin, Meng-Hua Li, Bin Chang, Ting-Fang Hsueh, Bing-Shiun Tsai, Po-Tuan Chen, Yang Yang, Kung-Hwa Wei
Publikováno v:
ACS applied materialsinterfaces. 14(33)
In this study, we synthesized four new A-DA'D-A acceptors (where A and D represent acceptor and donor chemical units) incorporating perylene diimide units (A') as their core structures and presenting various modes of halogenation and substitution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::894d2c8f048fb76637f6d64727e66f34
https://pubmed.ncbi.nlm.nih.gov/35904802
https://pubmed.ncbi.nlm.nih.gov/35904802
We show how a pulse-level implementation of the multi-qubit gates in neutral-atom device architectures allows for the simultaneous execution of single- and multi-qubit gates acting on overlapping sets of qubits, in a mechanism we name absorption. Wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3728c326edaa7b9c2abce3ecde97b82
Autor:
Yu‐Che Lin, Chung‐Hao Chen, Bing‐Shiun Tsai, Ting‐Fang Hsueh, Cheng‐Si Tsao, Shaun Tan, Bin Chang, Yu‐Ning Chang, Ting‐Yi Chu, Ching‐En Tsai, Cheng‐Sheng Chen, Yang Yang, Kung‐Hwa Wei
Publikováno v:
Advanced Functional Materials. :2215095
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::164f5fe6f4a863ffc396813972d8a75b
https://doi.org/10.1002/adfm.202215095
https://doi.org/10.1002/adfm.202215095
Publikováno v:
Journal of the Taiwan Institute of Chemical Engineers. 142:104637
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e61d6b78ff13162f93577cd22e530813
https://doi.org/10.1016/j.jtice.2022.104637
https://doi.org/10.1016/j.jtice.2022.104637