Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Bin-Chang Chang"'
Autor:
Bin-chang Chang, 張炳章
89
In this article, we studied on metal-insulator transition with oxygen content parameter d in the Sm2-xCexCuO4+d systems. We studied the d-wave pairing symmetry for the Sm2-xCexCuO4+d systems further. In the Sm2-xCexCuO4+d systems, the antifer
In this article, we studied on metal-insulator transition with oxygen content parameter d in the Sm2-xCexCuO4+d systems. We studied the d-wave pairing symmetry for the Sm2-xCexCuO4+d systems further. In the Sm2-xCexCuO4+d systems, the antifer
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/99545128281096615516
Autor:
King-Chang Shu, Burn Jeng Lin, Jaw-Jung Shin, Lin-Hung Shiu, Jan-Wen You, Bin-Chang Chang, Tsai-Sheng Gau, Shuo-Yen Chou
Publikováno v:
SPIE Proceedings.
This paper presented an integrated simulation framework linking our in-house mask writer simulator and the optical lithography simulation engines to include the mask corner rounding effect in lithographic performance evaluations. In the writer simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eb700194a58823202341fe389d05237
https://doi.org/10.1117/12.557745
https://doi.org/10.1117/12.557745
Autor:
Fu-Jye Liang, Kuang-Hsin Chen, Carlos H. Diaz, Chun-Kuang Chen, Jaw-Jung Shin, Chii-Ming Wu, Lin-Hung Shiu, Chenming Hu, Li-Wei Kung, Ping-Wei Wang, Chang-Yun Chang, Cheng-Chuan Huang, Chiu-Lien Lee, Bor-Wen Chan, King-Chang Shu, Tsai-Sheng Gau, Samuel Fung, Chang-Ta Yang, J.Y.-C. Sun, Cheng-Kuo Wen, Hou-Yu Chen, Peng-Fu Hsu, M.S. Liang, Burn-Jeng Lin, Jyu-Honig Shieh, Yee-Chaung See, Jan-Wen You, Fu-Liang Yang, Chien-Chao Huang, Hung-Wei Chen, Di-Hong Lee, Tang-Xuan Chung, Shui-Ming Cheng, Sheng-Da Liu, Bin-Chang Chang, Yu-Jun Chou
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
The first 45nm node planar-SOI technology has been developed with 6T-SRAM cell of 0.296 /spl mu/m/sup 2/. An adequate static noise margin of 120mV is obtained even at 0.6V operation. Fine patterning with line pitch of 130nm and contact pitch of 140nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c63f77d8d1817a120f09384733d85752
https://doi.org/10.1109/vlsit.2004.1345362
https://doi.org/10.1109/vlsit.2004.1345362
Autor:
Chiu-Lien Lee, Tsai-Sheng Gau, Ming Lu, King-Chang Shu, Bin-Chang Chang, Li-Wei Kung, Jaw-Jung Shin, Jan-Wen You, Burn-Jeng Lin
Publikováno v:
SPIE Proceedings.
A comprehensive study of alternating phase shifting mask (Alt-PSM) including mask making, 3-dimensional aerial image simulation, and wafer printing is reported in this paper. For the mask making, we found that the micro-loading effect will be greatly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33311536cf7405c1df5884ea04926448
https://doi.org/10.1117/12.504284
https://doi.org/10.1117/12.504284
Autor:
Tsai-Sheng Gau, Li-Wei Kung, Burn Jeng Lin, Bin-Chang Chang, Jaw-Jung Shin, Chang-Min Dai, Chung-Hsing Chang, Jan-Wen You
Publikováno v:
SPIE Proceedings.
Resolving the very small feature size of contact holes for 65-nm technology node has placed enormous challenge on even the up-to-date optical lithography techniques. Resolution enhancement technique (RET) will be helpful and necessary to alleviate th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4731545df63e4b64cfe9e1faa1efa765
https://doi.org/10.1117/12.467499
https://doi.org/10.1117/12.467499
Autor:
Jaw-Jung Shin, Fu-Jye Liang, Ming Lu, Li-Wei Kung, Fu-Liang Yang, Chien-Chao Huang, Hsun-Chih Tsao, Cheng-Kuo Wen, Jhon-Jhy Liaw, Ke-Wei Su, Yu-Jun Chou, Yi-Chun Huang, Yung-Shun Chen, Di-Hong Lee, Tze-Liang Lee, Shui-Ming Cheng, Samuel Fung, Chenming Hu, Bin-Chang Chang, Tang-Xuan Chung, Chuan-Ping Hou, Chang-Yun Chang, Tsai-Sheng Gau, Kuang-Hsin Chen, J.Y.-C. Sun, Cheng Chuan Huang, Hou-Yu Chen, Jan-Wen You, Liang Min-Chang, Jhi-cheng Lu, Chi-Chun Chen, Burn-Jeng Lin, Kuei-Shun Chen, Yee-Chia Yeo, Han-Jan Tao, J.H. Chen, Shih-Chang Chen, Hung-Wei Chen, Carlos H. Diaz, Yi-Ming Sheu, Chun-Kuang Chen, Bor-Wen Chan, Ying-Ho Chen, W. Chang, King-Chang Shu, C.H. Chen, Chii-Ming Wu, Cheng-hung Chang
Publikováno v:
Scopus-Elsevier
A 65 nm node strained SOI technology with high performance is demonstrated, providing drive currents of 1015 and 500 /spl mu/A//spl mu/m for N-FET and P-FET, respectively, at an off-state leakage of 40 nA//spl mu/m using 1 V operation. The technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2cd43133598ebbb8ca11a12eccb16a1
http://www.scopus.com/inward/record.url?eid=2-s2.0-17644444298&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-17644444298&partnerID=MN8TOARS