Zobrazeno 1 - 10
of 3 967
pro vyhledávání: '"Bimberg D"'
Autor:
Zakharov ND, Werner P, Bimberg D, Hopfer F, Mutig A, Shchukin VA, Savel’ev AV, Fiol G, Stock E, Eisele H, Dähne M, Mikhrin SS, Kovsh AR, Gerthsen D, Fischer U, Litvinov D, Rosenauer A, Ledentsov NN
Publikováno v:
Nanoscale Research Letters, Vol 2, Iss 9, Pp 417-429 (2007)
AbstractWe report on progress in growth and applications of submonolayer (SML) quantum dots (QDs) in high-speed vertical-cavity surface-emitting lasers (VCSELs). SML deposition enables controlled formation of high density QD arrays with good size and
Externí odkaz:
https://doaj.org/article/2c63405eb76f43edb6dadd38cfe00664
The feasibility of the QD-Flash concept, its fast write and erase times, is demonstrated together with storage times of 4 days at room temperature. The storage time of holes in (InGa)Sb QDs embedded in a (AlGa)P matrix can be extended by growth modif
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A76951
https://tud.qucosa.de/api/qucosa%3A76951/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A76951/attachment/ATT-0/
Autor:
Pomplun, J., Burger, S., Schmidt, F., Schliwa, A., Bimberg, D., Pietrzak, A., Wenzel, H., Erbert, G.
Publikováno v:
Phys. Status Solidi B 247, No. 4, 846-853 (2010)
In the present article we investigate optical near fields in semiconductor lasers. We perform finite element simulations for two different laser types, namely a super large optical waveguide (SLOW) laser, which is an edge emitter, and a vertical cavi
Externí odkaz:
http://arxiv.org/abs/1011.6244
Publikováno v:
Phys. Rev. Lett. 105, 257401 (2010)
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling
Externí odkaz:
http://arxiv.org/abs/1007.2733
We derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees well with recently published single-QD time-resolved PL measurements.
Externí odkaz:
http://arxiv.org/abs/0807.5056
Publikováno v:
J. Phys.: Condens. Matter 20, 454211 (2008)
We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we c
Externí odkaz:
http://arxiv.org/abs/0807.5024
Publikováno v:
Appl. Phys. Lett. 92, 063116 (2008)
Systematic time-resolved measurements on neutral and charged excitonic complexes (X, XX, X+, and XX+) of 26 different single InAs/GaAs quantum dots are reported. The ratios of the decay times are discussed in terms of the number of transition channel
Externí odkaz:
http://arxiv.org/abs/0802.1010
Autor:
Winkelnkemper, M., Seguin, R., Rodt, S., Schliwa, A., Reissmann, L., Strittmatter, A., Hoffmann, A., Bimberg, D.
Publikováno v:
Physica E 40, 2217 (2008)
We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quantum wells, are investigated using single-QD cathodoluminescence (CL).
Externí odkaz:
http://arxiv.org/abs/0711.3381
Photoluminescence spectra measured on a type-II GaSb/GaAs quantum dot ensemble at high excitation power indicate a Mott transition from the low density state comprising of spatially-indirect excitons to a high density electron-plasma state. Under the
Externí odkaz:
http://arxiv.org/abs/0706.1972
Autor:
Winkelnkemper, M., Seguin, R., Rodt, S., Schliwa, A., Reissmann, L., Strittmatter, A., Hoffmann, A., Bimberg, D.
Publikováno v:
J. Appl. Phys. 101, 113708 (2007)
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Reali
Externí odkaz:
http://arxiv.org/abs/0705.3595