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Autor:
Bimberg, Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Yakov Kovach, Alexander Kuzmenkov, Vladimir Nevedomsky, Nikolay Maleev, Evgenii Kolodeznyi, Kirill Voropaev, Alexey Vasilyev, Victor Ustinov, Anton Egorov, Saiyi Han, Si-Cong Tian, Dieter
Publikováno v:
Photonics; Volume 10; Issue 6; Pages: 660
A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed perf