Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Bill Pierson"'
Autor:
Bill Pierson, Woong Jae Chung, Lipkong Yap, Dongsuk Park, Patrick Snow, Juan Manuel Gomez, Nyan Aung, John C. Robinson, Lokesh Subramany, Karsten Gutjahr, Onur N. Demirer, Haiyong Gao, Pavan Samudrala, Miguel Garcia-Medina
Publikováno v:
SPIE Proceedings.
In recent years overlay (OVL) control schemes have become more complicated in order to meet the ever shrinking margins of advanced technology nodes. As a result, this brings up new challenges to be addressed for effective run-to- run OVL control. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fe27fdc3e700c3c5703cf8b8148d601
https://doi.org/10.1117/12.2218729
https://doi.org/10.1117/12.2218729
Autor:
MinGyu Kim, Sanghuck Jeon, JuHan Lee, Jeremy Nabeth, Jae-Wuk Ju, John C. Robinson, Bill Pierson, Hoyoung Heo
Publikováno v:
SPIE Proceedings.
Shrinking technology nodes and smaller process margins require improved photolithography overlay control. Generally, overlay measurement results are modeled with Cartesian polynomial functions for both intra-field and inter-field models and the model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fd7ccda29ae971b7706e5246968ba06
https://doi.org/10.1117/12.2219739
https://doi.org/10.1117/12.2219739
Autor:
Sanghuck Jeon, Sangjun Han, Dongsub Choi, Jeremy Nabeth, Young-Sik Kim, Irina Brinster, Honggoo Lee, John C. Robinson, Bill Pierson, Myoungsoo Kim, Hoyoung Heo
Publikováno v:
SPIE Proceedings.
Advancing technology nodes with smaller process margins require improved photolithography overlay control. Overlay control at develop inspection (DI) based on optical metrology targets is well established in semiconductor manufacturing. Advances in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af00fbc2ae4c64a0d0ab7671e15e1bd4
https://doi.org/10.1117/12.2219701
https://doi.org/10.1117/12.2219701
Autor:
Yayi Wei, Roger A. Nassar, Patrick P. Naulleau, Thomas Wallow, Bill Pierson, Harun H. Solak, Dario L. Goldfarb, Jeff Mackey, Chief-seng Koay, Kathleen Spear-Alfonso, Karen Petrillo, Robert L. Brainard, Robert Wood, Warren Montgomery, James W. Thakerlay
Publikováno v:
Journal of Photopolymer Science and Technology. 20:411-418
We have investigated a number of key resist factors using EUV lithography including activation energy of deprotection, and acid diffusion length. Our standard high activation resist material, MET-2D (XP5271F), is capable of robust performance at CDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bbc31f1027a79c5242c34a7483ac59e
https://doi.org/10.2494/photopolymer.20.411
https://doi.org/10.2494/photopolymer.20.411
Autor:
Christian Sparka, Brent Riggs, Karsten Gutjhar, Lipkong Yap, Bill Pierson, Miguel Garcia-Medina, Woong Jae Chung, Vidya Ramanathan, Onur N. Demirer, Ramkumar Karur-Shanmugam, Lokesh Subramany, John C. Robinson
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
With the introduction of Nix process nodes, leading-edge factories are facing challenging demands in shrinking design margins. Previously uncorrected high-order signatures, and uncompensated temporal changes of high-order signatures, carry an importa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcd32ce811d3973d6a3b0026995ba299
https://doi.org/10.1109/asmc.2015.7164504
https://doi.org/10.1109/asmc.2015.7164504
Autor:
Kangsan Lee, David Tien, MinGyu Kim, Bill Pierson, Dongsub Choi, JawWuk Ju, Mark D. Smith, Ady Levy, John C. Robinson, Sanghuck Jeon, Stuart Sherwin, Dohwa Lee, JuHan Lee, George Hoo
Publikováno v:
SPIE Proceedings.
Feedback control of overlay errors to the scanner is a well-established technique in semiconductor manufacturing [1]. Typically, overlay errors are measured, and then modeled by least-squares fitting to an overlay model. Overlay models are typically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f234c692b26c44b0fc3ad25074f8eb5c
https://doi.org/10.1117/12.2085074
https://doi.org/10.1117/12.2085074
Autor:
Woong Jae Chung, Miguel Garcia-Medina, Lipkong Yap, Bill Pierson, John C. Robinson, Christian Sparka, Vidya Ramanathan, Karsten Gutjahr, Onur N. Demirer, Ramkumar Karur-Shanmugam, Brent Riggs, Lokesh Subramany
Publikováno v:
SPIE Proceedings.
With the introduction of N2x and N1x process nodes, leading-edge factories are facing challenging demands of shrinking design margins. Previously un-corrected high-order signatures, and un-compensated temporal changes of high-order signatures, carry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f344da32b9f4a9f1d13720f819fc920
https://doi.org/10.1117/12.2190852
https://doi.org/10.1117/12.2190852
Autor:
Lipkong Yap, Young Ki Kim, Lokesh Subramany, Hong Wei, Karsten Gutjahr, Jie Gao, Ram Karur-Shanmugam, Pedro Herrera, Woong Jae Chung, Joungchel Lee, Chen Li, Anna Golotsvan, Vidya Ramanathan, Mark Yelverton, Kevin Huang, Lester Wang, Jeong Soo Kim, John Tristan, Bill Pierson, Ching-Hsiang Hsu
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
As leading edge lithography moves to advanced nodes in high-mix, high-volume manufacturing environment, automated control of critical dimension (CD) within wafer has become a requirement. Current control methods to improve CD uniformity (CDU) general
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a986a4bdced6c06f78e6e0178885f35
https://doi.org/10.1117/12.2045433
https://doi.org/10.1117/12.2045433
Autor:
Eran Amit, Chin-Chou Kevin Huang, Dana Klein, Michael Har-Zvi, Guy M. Cohen, Bill Pierson, Ramkumar Karur-Shanmugam, Hiroyuki Kurita, Nuriel Amir, Cindy Kato
Publikováno v:
SPIE Proceedings.
The semiconductor industry is moving toward 20nm nodes and below. As the Overlay (OVL) budget is getting tighter at these advanced nodes, the importance in the accuracy in each nanometer of OVL error is critical. When process owners select OVL target
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa685509da16abe852c763a42fbed467
https://doi.org/10.1117/12.2011454
https://doi.org/10.1117/12.2011454
Autor:
Lin Chua, Ramkumar Karur-Shanmugam, KyungBae Hwang, Antonio Mani, Gino Marcuccilli, Byounghoon Lee, Chin-Chou Kevin Huang, Inhwan Lee, M. Ferber, John C. Robinson, Bill Pierson, Dongsub Choi, Klaus-Dieter Roeth
Publikováno v:
SPIE Proceedings.
In preparation for EUV lithography (EUVL) in high volume manufacturing, a preproduction ASML NXE:3100 step-and- scan system was used to assess overlay performance under mix-and-match between EUV and ArF lithography, which will be critical for the suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15cad8d6b77ac564de7e9b3135d3b667
https://doi.org/10.1117/12.2011510
https://doi.org/10.1117/12.2011510