Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Bill Dauksher"'
Publikováno v:
IEEE Journal of Photovoltaics. 7:437-443
We present the impacts of silicon nitride (SiN x ) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c72bad56b759cab618b5bec8494c029
https://doi.org/10.1109/jphotov.2016.2642952
https://doi.org/10.1109/jphotov.2016.2642952
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
Various characterization techniques have historically been developed in order to screen potential induced degradation (PID)-susceptible cells, but those techniques require final solar cells. We present a new characterization technique for screening P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea22ecdb843a6811414752bae744b56d
https://doi.org/10.1109/pvsc.2016.7749741
https://doi.org/10.1109/pvsc.2016.7749741
Autor:
P. Zurcher, David P. Mancini, Sergio Pacheco, M. Miller, S. R. Young, Bill Dauksher, Don Weston
Publikováno v:
Journal of Micromechanics and Microengineering. 15:1824-1830
A method to fabricate microelectromechanical systems (MEMS) clamped?clamped resonators using polymethylglutarimide (PMGI) as a sacrificial release layer has been developed. Control of the critical air-gap dimension between the resonator beam and driv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f58f88f1efe91834d60de6ef493ce96
https://doi.org/10.1088/0960-1317/15/10/006
https://doi.org/10.1088/0960-1317/15/10/006
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
The photovoltaics industry is expected to slowly transition from p-type mono-Si cells to n-type mono-Si over the next several years. Diffusion of boron into silicon to fabricate a p+ emitter can result in an efficiency-reducing boron rich layer (BRL)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf4cc50b030b6eb0362a56fff999f17
https://doi.org/10.1109/pvsc.2014.6925002
https://doi.org/10.1109/pvsc.2014.6925002
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD boron-doped amorphous silicon (a-Si) films. Aluminum metallization was deposited from evaporator and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0515070f2dfc058b0511354de8a29676
https://doi.org/10.1109/pvsc.2013.6744927
https://doi.org/10.1109/pvsc.2013.6744927
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
As crystalline silicon solar cells continue to get thinner, the surfaces of the cell play an ever important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a6b0e9a75d8ae32f2214320ced2658
https://doi.org/10.1109/pvsc.2013.6744377
https://doi.org/10.1109/pvsc.2013.6744377
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
Detailed balance calculations are prevalently used to calculate the thermodynamic limit of performance of photovoltaic devices. This work combines the detailed balance calculations with the lifetime curve to determine the limiting performance of sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1074b4cba782574348f785f36584b3ec
https://doi.org/10.1109/pvsc.2013.6744363
https://doi.org/10.1109/pvsc.2013.6744363
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
The charged state density at the a-Si/c-Si interface is an important parameter in a heterojunction a cell. The extraction of the charged state density at the interface from measurements of lateral conductance is demonstrated by simulations. In a-Si/c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a790373083e59b337619b0e534a48bf
https://doi.org/10.1109/pvsc.2010.5617086
https://doi.org/10.1109/pvsc.2010.5617086
Autor:
E. Luckowski, Richard D. Peters, Bill Dauksher, Eric Weisbrod, Colita Parker, Jonathan L. Cobb
Publikováno v:
SPIE Proceedings.
The high absorption of extreme ultraviolet (EUV) radiation by all materials necessitates the use of thin photoresist films with thicknesses less than 200 nm for EUV lithography to ensure good imaging. Thinning the resist thickness below 150 nm or eve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff21ef578c5e9e669ee0cd3ebec872ff
https://doi.org/10.1117/12.535643
https://doi.org/10.1117/12.535643
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 30:021201
Hydrogenated silicon nitride films (SiNx:H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient antireflection coating and passivating layer. In this paper, we compared two SiNx:H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1636e282dbfc2fe2a77de22c59a3258
https://doi.org/10.1116/1.3687423
https://doi.org/10.1116/1.3687423