Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Biju Ninan"'
Publikováno v:
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference.
We present a CMOS compatible fabrication process which utilizes aluminum nitride with titanium electrodes for high-speed piezoelectric actuation. Aluminum nitride film morphology was improved by maintaining vacuum between film depositions and by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5c241f563fb57290a51e6fbe0adb4e0
https://doi.org/10.1109/sensor.2009.5285688
https://doi.org/10.1109/sensor.2009.5285688
Autor:
Biju Ninan, Kevin Moraes, See-Eng Phan, Tanaka Keiichi, Jianxin Lei, Chien-Teh Kao, Kishore Lavu, Srinivas Gandikota, Bingxi Wood, Xinliang Lu
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing.
For advanced devices at 65 nm node and beyond, nickel silicide formed by depositing Ni or its alloys with subsequent annealing has been chosen as the source/drain and gate contact materials. An in-situ dry chemical cleaning technology (Siconi ) has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0639de0cba8bf70e15e5ed5a99adf71
https://doi.org/10.1109/issm.2006.4493117
https://doi.org/10.1109/issm.2006.4493117
Publikováno v:
Journal of Micromechanics and Microengineering. 20:025008
Piezoelectric materials are widely used for microscale sensors and actuators but can pose material compatibility challenges. This paper reports a post-CMOS compatible fabrication process for piezoelectric sensors and actuators on silicon using only s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a6ce7e8052f7836a6aab7d730c112af
https://doi.org/10.1088/0960-1317/20/2/025008
https://doi.org/10.1088/0960-1317/20/2/025008
Autor:
Kishore Lavu, Michael Smayling, Jianxin Lei, Srinivas Gandikota, Bingxi Wood, Chien-Teh Kao, Biju Ninan, See-Eng Phan
Publikováno v:
ECS Meeting Abstracts. :1289-1289
Pre-Silicide clean is a critical step in NiSi integration to keep silicide/Si interface clean and defect-free for good device performance. Traditional pre-silicide clean uses HF wet clean which requires tight queue time control to prevent native oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24eb1b28e54e8e4f6fe803995fd359d2
https://doi.org/10.1149/ma2007-02/25/1289
https://doi.org/10.1149/ma2007-02/25/1289
Autor:
Jianxin Lei, See-Eng Phan, Xinliang Lu, Chien-Teh Kao, Lavu, K., Moraes, K., Tanaka, K., Wood, B., Biju Ninan, Gandikota, S.
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing; 2006, p393-396, 4p